25RIA10 Vishay, 25RIA10 Datasheet - Page 2

SCR MED POWER 100V 25A TO-48

25RIA10

Manufacturer Part Number
25RIA10
Description
SCR MED POWER 100V 25A TO-48
Manufacturer
Vishay
Datasheets

Specifications of 25RIA10

Scr Type
Standard Recovery
Voltage - Off State
100V
Voltage - Gate Trigger (vgt) (max)
2V
Voltage - On State (vtm) (max)
1.7V
Current - On State (it (av)) (max)
25A
Current - On State (it (rms)) (max)
40A
Current - Gate Trigger (igt) (max)
60mA
Current - Hold (ih) (max)
130mA
Current - Off State (max)
20mA
Current - Non Rep. Surge 50, 60hz (itsm)
420A, 440A
Operating Temperature
-65°C ~ 125°C
Mounting Type
Chassis, Stud Mount
Package / Case
TO-208AA, TO-48
Current - On State (it (rms) (max)
40A
Breakover Current Ibo Max
440 A
Rated Repetitive Off-state Voltage Vdrm
100 V
Off-state Leakage Current @ Vdrm Idrm
20 mA
Forward Voltage Drop
1.7 V
Gate Trigger Voltage (vgt)
2 V
Maximum Gate Peak Inverse Voltage
10 V
Gate Trigger Current (igt)
60 mA
Holding Current (ih Max)
130 mA
Mounting Style
Stud
Peak Repetitive Off-state Voltage, Vdrm
1kV
Gate Trigger Current Max, Igt
60mA
Current It Av
40A
On State Rms Current It(rms)
40A
Peak Non Rep Surge Current Itsm 50hz
420A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*25RIA10
25RIA Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
Notes
(1)
(2)
www.vishay.com
2
VOLTAGE RATINGS
TYPE
NUMBER
25RIA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of
on-state slope resistance
High level value of
on-state slope resistance
Maximum on-state voltage
Maximum holding current
Latching current
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs
For voltage pulses with t
2
2
t for fusing
√t for fusing
VOLTAGE
CODE
100
120
10
20
40
60
80
p
≤ 5 ms
V
DRM
/V
AND OFF-STATE VOLTAGE
RRM
SYMBOL
V
For technical questions, contact: ind-modules@vishay.com
V
I
T(RMS)
I
, MAXIMUM REPETITIVE PEAK
I
T(TO)1
T(TO)2
V
T(AV)
I
TSM
I
2
r
r
I
I
2
TM
t1
t2
√t
H
L
t
1000
1200
Medium Power Thyristors
100
200
400
600
800
V
180° sinusoidal conduction
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied,
T
(16.7 % x π x I
T
(I > π x I
(16.7 % x π x I
T
(I > π x I
I
T
pk
J
J
J
J
(Stud Version), 25 A
= T
= T
= T
= 25 °C, anode supply 6 V, resistive load
= 79 A, T
J
J
J
maximum
maximum
maximum
T(AV)
T(AV)
J
TEST CONDITIONS
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
), T
), T
= 25 °C
T(AV)
T(AV)
(1)
J
J
= T
= T
< I < π x I
< I < π x I
J
J
RRM
RRM
maximum
maximum
V
RSM
Sinusoidal
half wave,
initial T
T
T(AV)
T(AV)
J
, MAXIMUM NON-REPETITIVE
maximum
),
),
PEAK VOLTAGE
J
=
1100
1300
150
300
500
700
900
V
(2)
VALUES
8670
0.99
1.40
10.1
1.70
420
440
350
370
867
790
615
560
130
200
5.7
25
85
40
Document Number: 93701
AT T
I
DRM
Revision: 19-Sep-08
J
/I
RRM
= T
mA
J
UNITS
20
10
MAXIMUM
A
MAXIMUM
A
mA
°C
2
A
A
A
V
V
2
√s
s

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