BT151S-500R,118 NXP Semiconductors, BT151S-500R,118 Datasheet - Page 2

• Manufacturer Part Number: BT151S-500R,118
• Description: THYRISTOR 500V 12A SOT428
• Manufacturer: NXP Semiconductors

Specifications of BT151S-500R,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Scr Type: Standard Recovery
• Voltage - Off State: 500V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 7.5A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 20mA
• Current - Off State (max): 500µA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A, 132A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Current - On State (it (rms) (max): 12A
• Breakover Current Ibo Max: 132 A
• Rated Repetitive Off-state Voltage Vdrm: 500 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934048710118; BT151S-500R /T3; BT151S-500R /T3

NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BT151S_SER_L_R_5
Product data sheet
Type number
BT151S-500L
BT151S-500R
BT151S-650L
BT151S-650R
BT151S-800R
Symbol
V
V
I
I
I
I
dI
I
V
P
P
T
T
T(AV)
T(RMS)
TSM
2
GM
stg
j
DRM
RRM
t
RGM
GM
G(AV)
T
/dt
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15A/ s.
Ordering information
Limiting values
Parameter
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
non-repetitive peak on-state
current
I
rate of rise of on-state current
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
Package
Name
DPAK
Description
plastic single-ended surface-mounted package; 3 leads (one lead cropped) SOT428
Conditions
BT151S-500L; BT151S-500R
BT151S-650L; BT151S-650R
BT151S-800R
BT151S-500L; BT151S-500R
BT151S-650L; BT151S-650R
BT151S-800R
half sine wave; T
see
all conduction angles; see
and
half sine wave; T
surge; see
t = 10 ms
I
dI
over any 20 ms period
TM
G
t = 10 ms
t = 8.3 ms
Rev. 05 — 9 October 2006
/dt = 50 mA/ s
= 20 A; I
Figure 1
5
Figure 2
G
= 50 mA;
mb
j
= 25 C prior to
and
103 C;
BT151S series L and R
3
Figure 4
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
40
Max
500
650
800
500
650
800
7.5
12
120
132
72
50
2
5
5
0.5
+150
125
© NXP B.V. 2006. All rights reserved.
Thyristors
Version
Unit
V
V
V
V
V
V
A
A
A
A
A
A/ s
A
V
W
W
C
C
2
s
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