BT151S-650R,118 NXP Semiconductors, BT151S-650R,118 Datasheet - Page 8
![THYRISTOR 650V 12A SOT428](/photos/5/32/53207/dpak_sml.jpg)
BT151S-650R,118
Manufacturer Part Number
BT151S-650R,118
Description
THYRISTOR 650V 12A SOT428
Manufacturer
NXP Semiconductors
Datasheet
1.BT151S-500R118.pdf
(13 pages)
Specifications of BT151S-650R,118
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Scr Type
Standard Recovery
Voltage - Off State
650V
Voltage - Gate Trigger (vgt) (max)
1.5V
Voltage - On State (vtm) (max)
1.75V
Current - On State (it (av)) (max)
7.5A
Current - On State (it (rms)) (max)
12A
Current - Gate Trigger (igt) (max)
15mA
Current - Hold (ih) (max)
20mA
Current - Off State (max)
500µA
Current - Non Rep. Surge 50, 60hz (itsm)
120A, 132A
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Current - On State (it (rms) (max)
12A
Breakover Current Ibo Max
132 A
Rated Repetitive Off-state Voltage Vdrm
650 V
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Forward Voltage Drop
1.75 V
Gate Trigger Voltage (vgt)
1.5 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
15 mA
Holding Current (ih Max)
20 mA
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934048730118
BT151S-650R /T3
BT151S-650R /T3
BT151S-650R /T3
BT151S-650R /T3
NXP Semiconductors
BT151S_SER_L_R_5
Product data sheet
Fig 11. Normalized holding current as a function of
I
H(25 C)
I
H
3
2
1
0
junction temperature
50
0
50
100
001aaa950
T
j
( C)
150
Rev. 05 — 9 October 2006
Fig 12. Critical rate of rise of off-state voltage as a
dV
(V/ s)
D
10
10
10
/dt
BT151S series L and R
10
4
3
2
(1) R
(2) Gate open circuit
function of junction temperature; minimum
values
0
GK
= 100
(2)
(1)
50
100
© NXP B.V. 2006. All rights reserved.
T
j
001aaa949
( C)
150
Thyristors
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