BT151S-650L,118 NXP Semiconductors, BT151S-650L,118 Datasheet - Page 10

• Manufacturer Part Number: BT151S-650L,118
• Description: THYRISTOR 500V 12A DPAK
• Manufacturer: NXP Semiconductors

Specifications of BT151S-650L,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Scr Type: Standard Recovery
• Voltage - Off State: 650V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 7.5A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 5mA
• Current - Hold (ih) (max): 20mA
• Current - Off State (max): 500µA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A, 132A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Current - On State (it (rms) (max): 12A
• Rated Repetitive Off-state Voltage Vdrm: 650 V
• Breakover Current Ibo Max: 132 A
• On-state Rms Current (it Rms): 12 A
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Gate Trigger Voltage (vgt): 0.4 V
• Gate Trigger Current (igt): 2 mA
• Holding Current (ih Max): 20 mA
• Forward Voltage Drop: 1.4 V
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 650 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934060605118; BT151S-650L /T3; BT151S-650L /T3

NXP Semiconductors
8. Mounting
BT151S_SER_L_R_5
Product data sheet
Fig 14. SOT428: minimum pad size for surface-mounting
Plastic meets requirements of UL94 V-O at 3.175 mm
Rev. 05 — 9 October 2006
2.15
7.0
2.5
BT151S series L and R
4.57
7.0
001aab021
1.5
© NXP B.V. 2006. All rights reserved.
Thyristors
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