MCR310-10G ON Semiconductor, MCR310-10G Datasheet - Page 2

• Manufacturer Part Number: MCR310-10G
• Description: THYRISTOR SCR 10A 800V TO220AB
• Manufacturer: ON Semiconductor

Specifications of MCR310-10G

• Scr Type: Sensitive Gate
• Voltage - Off State: 800V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 2.2V
• Current - On State (it (rms)) (max): 10A
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 6mA
• Current - Off State (max): 500µA
• Current - Non Rep. Surge 50, 60hz (itsm): 100A @ 60Hz
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current - On State (it (rms) (max): 10A
• Breakover Current Ibo Max: 100 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 2.2 V
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 6 mA
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - On State (it (av)) (max): -
• Lead Free Status / Rohs Status: Details
• Other names: MCR310-10GOS

ELECTRICAL CHARACTERISTICS
1. Ratings apply for negative gate voltage or R
2. Does not include R
0.5
0.3
120
100
110
Peak Forward Blocking Current
Peak Reverse Blocking Current
On-State Voltage
Gate Trigger Current, Continuous dc
Gate Trigger Voltage, Continuous dc
Holding Current
Critical Rate of Rise of Forward Blocking Voltage
Gate Controlled Turn-On Time
3
2
1
−40
90
80
70
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the
voltage applied exceeds the rated blocking voltage.
(T
(T
(I
(V
(V
(V
(V
(V
(V
0
TM
J
J
D
D
D
D
D
D
= 110 C, V
= 110 C, V
−20
= 12 V, R
= 12 V, R
= Rated V
= 12 V, I
= Rated V
= Rated V
= 20 A Peak, Pulse Width p 1 ms, Duty Cycle p 2%)
Figure 3. Normalized Gate Current
Figure 1. Average Current Derating
= 30
I
T(AV)
0
2
TM
L
L
T
DRM
DRM
DRM
D
R
, AVERAGE ON-STATE CURRENT (AMPS)
= 100 )
= 100 )
J
= 100 mA)
, JUNCTION TEMPERATURE ( C)
= Rated V
= Rated V
20
GK
60
, R
, T
, I
TM
Characteristic
90
current.
J
L
40
= 110 C, Exponential Waveform)
= 10 k , T
= 20 A, I
4
DRM
RRM
60
(1)
(1)
180
)
)
G
J
= 2 mA)
80
(2)
= 110 C)
= CONDUCTION ANGLE
6
(T
V
C
D
90
= 12 Vdc
= 25 C, R
GK
= 1 k . Devices shall not have a positive gate voltage concurrently with a negative voltage
T
T
T
T
100
C
C
C
C
8
= 110 C
= 25 C
= 110 C
= 25 C
GK
120
http://onsemi.com
MCR310 Series
= 1 k
dc
140
10
unless otherwise noted)
2
Symbol
I
I
dv/dt
V
V
DRM
RRM
I
t
GT
I
TM
GT
gt
H
0.7
0.6
0.5
0.4
0.3
0.2
0.1
20
16
12
8
4
0
−60
0
−40
Figure 2. On-State Power Dissipation
= CONDUCTION ANGLE
Min
0.1
—
—
—
—
—
—
—
—
—
—
I
T(AV)
−20
= 30
2
Figure 4. Gate Voltage
, AVERAGE ON-STATE CURRENT (AMPS)
T
J
60
, JUNCTION TEMPERATURE ( C)
0
Typ
1.7
0.5
30
10
—
—
—
—
—
—
90
1
20
4
40
180
60
Max
6
500
500
200
2.2
1.5
10
10
—
—
—
6
V
D
80
= 12 Vdc
100
8
Volts
Volts
V/ms
Unit
mA
mA
mA
mA
mA
mA
ms
120
dc
10