MCR310-10 ONSEMI [ON Semiconductor], MCR310-10 Datasheet
MCR310-10
Manufacturer Part Number
MCR310-10
Description
Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
1.MCR310-10.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MCR310-10
Manufacturer:
ON
Quantity:
18 000
MCR310 Series
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
temperature, light and speed control; process and remote controls;
warning systems; capacitive discharge circuits and MPU interface.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
(1) V
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
March, 2007 − Rev. 3
Peak Repetitive Forward and Reverse
On-State RMS Current (T
Peak Non-repetitive Surge Current
Circuit Fusing (t = 8.3 ms)
Peak Gate Voltage (t p 10 ms)
Peak Gate Current (t p 10 ms)
Peak Gate Power (t p 10 ms)
Average Gate Power
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Designed for industrial and consumer applications such as
and Stability
Resistance, High Heat Dissipation and Durability
Integrated Circuits
Center Gate Geometry for Uniform Current Density
All Diffused and Glass-Passivated Junctions for Parameter Uniformity
Small, Rugged, Thermowatt Construction for Low Thermal
Low Trigger Currents, 200 mA Maximum for Direct Driving from
Pb−Free Packages are Available
Semiconductor Components Industries, LLC, 2007
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Blocking Voltage
(1/2 Cycle, 60 Hz, T
DRM
(T
(1/2 Sine Wave, R
J
and V
= −40 to 110 C)
Characteristic
RRM
Rating
for all types can be applied on a continuous basis. Ratings
(1)
GK
J
(T
= −40 to 110 C)
J
= 1 k )
C
= 25 C unless otherwise noted.)
= 75 C)
Preferred Device
MCR310-10
MCR310-6
MCR310-8
Symbol
Symbol
I
P
V
V
T(RMS)
R
R
I
V
P
I
T
TSM
G(AV)
DRM
RRM
I
GM
T
or
GM
GM
stg
−
2
J
JC
JA
t
−40 to +150
−40 to +110
Value
0.75
Max
400
600
800
100
2.2
10
40
60
1
5
8
5
1
Amps
Amps
Watts
in.-lb.
Volts
Volts
Amp
Watt
Unit
Unit
A
C/W
C/W
2
C
C
s
x
A
Y
WW
G
Preferred devices are recommended choices for future use
and best overall value.
MCR310−6
MCR310−6G
MCR310−8
MCR310−8G
MCR310−10
MCR310−10G
Device
1
CASE 221A
TO−220AB
STYLE 3
2
3
= 6, 8 or 10
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
400 thru 800 VOLTS
10 AMPERES RMS
A
http://onsemi.com
4
TO220AB
TO220AB
(Pb−Free)
TO220AB
TO220AB
(Pb−Free)
TO220AB
TO220AB
(Pb−Free)
Package
SCRs
Publication Order Number:
G
MCR310−xG
MARKING
DIAGRAM
AYWW
C
Shipping
500/Box
500/Box
500/Box
500/Box
500/Box
500/Box
MCR310/D
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MCR310-10 Summary of contents
Page 1
... Peak Repetitive Forward and Reverse (1) Blocking Voltage (T = −40 to 110 C) J (1/2 Sine Wave MCR310-6 MCR310-8 MCR310-10 On-State RMS Current ( Peak Non-repetitive Surge Current (1/2 Cycle −40 to 110 C) J Circuit Fusing (t = 8.3 ms) Peak Gate Voltage ( ms) Peak Gate Current ( ms) ...
Page 2
... I , AVERAGE ON-STATE CURRENT (AMPS) T(AV) Figure 1. Average Current Derating 0.5 0.3 −40 − JUNCTION TEMPERATURE ( C) J Figure 3. Normalized Gate Current MCR310 Series ( unless otherwise noted Symbol T = 110 DRM 110 RRM ...
Page 3
... Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com MCR310 Series PACKAGE DIMENSIONS TO−220AB CASE 221A−07 ISSUE AA ...