MCR08BT1 ON Semiconductor, MCR08BT1 Datasheet - Page 2

• Manufacturer Part Number: MCR08BT1
• Description: THYRISTOR SCR 0.8A 200V SOT223
• Manufacturer: ON Semiconductor

Specifications of MCR08BT1

• Scr Type: Sensitive Gate
• Voltage - Off State: 200V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.7V
• Current - On State (it (rms)) (max): 800mA
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 8A @ 60Hz
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Current - On State (it (rms) (max): 800mA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - On State (it (av)) (max): -
• Other names: MCR08BT1OSCT

2. Pulse Test: Pulse Width
3. R
4. R
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 3)
Peak Forward On-State Voltage (Note 2) (I
Gate Trigger Current (Continuous dc) (Note 4) (V
Holding Current (Note 3) (V
Gate Trigger Voltage (Continuous dc) (Note 4) (V
Critical Rate-of-Rise of Off State Voltage
Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223
(V
(V
GK
GK
Symbol
V
I
V
I
V
I
0.984
DRM
RRM
H
25.0
AK
pk
DRM
RRM
TM
= 1000 W is included in measurement.
is not included in measurement.
= Rated V
= Rated V
0.079
0.079
2.0
2.0
0.096
2.44
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
DRM
DRM
0.059
1.5
, T
0.059
or V
1.5
0.091
C
2.3
= 110 C, R
AK
RRM
0.059
300 ms, Duty Cycle
0.15
0.472
1.5
0.096
3.8
12.0
2.44
= 12 Vdc, Initiating Current = 20 mA)
0.091
, R
2.3
Characteristic
GK
0.059
0.059
1.5
1.5
= 1 kW
GK
(T
0.244
0.096
= 1 kW, Exponential Method)
2.44
6.2
T
inches
C
mm
= 1.0 A Peak)
= 25 C unless otherwise noted)
AK
AK
2%.
= 12 Vdc, R
= 12 Vdc, R
BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR.
http://onsemi.com
BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL.
L
L
MATERIAL: G10 FIBERGLASS BASE EPOXY
= 100 W)
= 100 W)
I
Reverse Avalanche Region
Anode −
RRM
2
Reverse Blocking Region
at V
T
T
J
J
Voltage Current Characteristic of SCR
= 25 C
= 110 C
RRM
(off state)
on state
I
DRM
Symbol
dv/dt
V
+ Current
V
I
GT
I
, I
TM
GT
H
RRM
Forward Blocking Region
I
H
V
Min
10
TM
−
−
−
−
−
−
(off state)
I
DRM
Typ
−
−
−
−
−
−
−
Anode +
at V
DRM
Max
200
200
1.7
5.0
0.8
10
−
+ Voltage
V/ms
Unit
mA
mA
mA
mA
V
V