ZXTDC3M832TA Diodes Zetex, ZXTDC3M832TA Datasheet - Page 3

TRANS NPN 50V PNP 40V 8MLP

ZXTDC3M832TA

Manufacturer Part Number
ZXTDC3M832TA
Description
TRANS NPN 50V PNP 40V 8MLP
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXTDC3M832TA

Transistor Type
NPN, PNP
Current - Collector (ic) (max)
4A, 3A
Voltage - Collector Emitter Breakdown (max)
50V, 40V
Vce Saturation (max) @ Ib, Ic
320mV @ 200mA, 4A / 370mV @ 250mA, 2.5A
Current - Collector Cutoff (max)
25nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 2A, 2V / 60 @ 1.5A, 2V
Power - Max
1W
Frequency - Transition
165MHz, 190MHz
Mounting Type
Surface Mount
Package / Case
8-MLP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXTDC3M832TATR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXTDC3M832TA
Manufacturer:
ZETEX
Quantity:
9 000
ISSUE 1 - JUNE 2002
0.01
0.1
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
80
60
40
20
100µ 1m
1
0
0.1
0.1
Power Dissipation v Board Area
V
Limited
V
Note (a)(f)
Transient Thermal Impedance
CE(SAT)
Note (a)(f)
T
T
Continuous
D=0.5
D=0.2
Single Pulse, T
CE
amb
j max
=25°C
=150°C
Collector-Emitter Voltage (V)
NPN Safe Operating Area
DC
2oz copper
Note (f)
Board Cu Area (sqcm)
10m 100m
1s
Pulse Width (s)
100ms
1
1
amb
=25°C
1oz copper
Note (f)
10ms
2oz copper
Note (g)
D=0.1
1
D=0.05
1ms
Single Pulse
TYPICAL CHARACTERISTICS
10
10
10
100us
1oz copper
Note (g)
100
100
100
1k
3
225
200
175
150
125
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
75
50
25
0
0.01
0.1
0
0.1
Thermal Resistance v Board Area
10
1
0.1
V
1oz Cu
Note (d)(f)
V
Limited
Note (a)(f)
2oz copper
Note (f)
CE(SAT)
Single Pulse, T
CE
25
PNP Safe Operating Area
Collector-Emitter Voltage (V)
Board Cu Area (sqcm)
DC
Derating Curve
Temperature (°C)
50
1
1s
2oz Cu
Note (e)(g)
1oz copper
Note (f)
100ms
amb
1
2oz copper
Note (g)
75
ZXTDC3M832
=25°C
2oz Cu
Note (a)(f)
10ms
100
10
1ms
1oz Cu
Note (d)(g)
1oz copper
Note (g)
T
amb
125
=25°C
100us
10
150
100

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