MBT6429DW1T1G ON Semiconductor, MBT6429DW1T1G Datasheet - Page 3
![TRANS DUAL NPN 200MA 40V SOT-363](/photos/1/38/13878/sc-70-6_sc-88_sot-363_419b___02_sml.jpg)
MBT6429DW1T1G
Manufacturer Part Number
MBT6429DW1T1G
Description
TRANS DUAL NPN 200MA 40V SOT-363
Manufacturer
ON Semiconductor
Datasheet
1.MBT6429DW1T1G.pdf
(5 pages)
Specifications of MBT6429DW1T1G
Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
500 @ 100µA, 5V
Power - Max
150mW
Frequency - Transition
700MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
150 mW
Maximum Operating Frequency
700 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
500 at 0.01 mA at 5 V
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MBT6429DW1T1G
MBT6429DW1T1GOSTR
MBT6429DW1T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBT6429DW1T1G
Manufacturer:
ON Semiconductor
Quantity:
900
Company:
Part Number:
MBT6429DW1T1G
Manufacturer:
ON
Quantity:
30 000
300
200
100
7.0
5.0
3.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
7.0
5.0
3.0
30
20
10
10
70
50
30
20
10
10
10 20
10 20
R
BANDWIDTH = 1.0 Hz
1.0 mA
S
20
≈ 0
3.0 mA
50 100 200
50 100 200
50 100 200
I
Figure 2. Effects of Frequency
C
Figure 6. Total Noise Voltage
= 10 mA
R
Figure 4. Noise Current
S
300 mA
, SOURCE RESISTANCE (OHMS)
10 mA
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
300 mA
BANDWIDTH = 1.0 Hz
500 1 k 2 k
500 1 k 2 k
500 1 k 2 k
1.0 mA
3.0 mA
100 mA
R
S
≈ 0
I
C
BANDWIDTH = 1.0 Hz
30 mA
100 mA
= 10 mA
5 k 10 k 20 k 50 k 100 k
300 mA
5 k 10 k 20 k 50 k 100 k
5 k 10 k 20 k 50 k 100 k
1.0 mA
I
3.0 mA
C
= 10 mA
10 mA
NOISE CHARACTERISTICS
(V
CE
http://onsemi.com
100 Hz NOISE DATA
30 mA
NOISE VOLTAGE
= 5.0 Vdc, T
3
8.0
4.0
8.0
4.0
7.0
5.0
3.0
16
12
20
12
30
20
10
20
16
0
0
A
0.01 0.02
10
10 20
= 25°C)
BANDWIDTH = 1.0 Hz
20
BANDWIDTH = 1.0 Hz
Figure 3. Effects of Collector Current
R
50 100 200
Figure 5. Wideband Noise Figure
50 100 200
S
≈ 0
0.05 0.1
R
R
I
S
S
C
Figure 7. Noise Figure
, SOURCE RESISTANCE (OHMS)
, SOURCE RESISTANCE (OHMS)
, COLLECTOR CURRENT (mA)
BANDWIDTH = 10 Hz to 15.7 kHz
I
C
500 1 k 2 k
500 1 k 2 k
0.2
= 10 mA
0.5
f = 10 Hz
10 mA
100 mA
10 kHz
1.0
5 k 10 k 20 k 50 k 100 k
5 k 10 k 20 k 50 k 100 k
3.0 mA
500 mA
1.0 mA
2.0
30 mA
300 mA
I
100 Hz
C
100 kHz
= 1.0 mA
100 mA
5.0
1.0 kHz
10 mA
10