BC847BS Fairchild Semiconductor, BC847BS Datasheet - Page 2

• Manufacturer Part Number: BC847BS
• Description: TRANSISTOR NPN 45V 100MA SC70-6
• Manufacturer: Fairchild Semiconductor

Specifications of BC847BS

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 210mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.1 A
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 310 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 110
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 200
• Frequency (max): 100MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BC847BS

BC847BS Rev. A
Electrical Characteristics
Off Characteristics
On Characteristics
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
V
V
V
V
I
h
V
V
CBO
FE
(BR)CBO
(BR)CES
(BR)CEO
(BR)EBO
CE(
BE(
Symbol
on
sat
)
)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Emitter-Base Breakdown Voltage
Parameter
* T
a
= 25°C unless otherwise noted
*
*
I
I
I
I
V
V
I
I
I
I
I
C
C
C
E
C
C
C
C
C
CB
CB
= 10 mA, I
= 2.0 mA, V
= 10 mA, I
= 100 mA, I
= 2.0 mA, V
= 10 mA, V
= 10 μA, I
= 10 μA, I
= 10 μA, I
= 30 V, I
= 30 V, I
Test Condition
2
E
E
C
E
E
B
B
CE
= 0
= 0, T
= 0
= 0
= 0
= 0
= 0.5 mA
B
CE
CE
= 5.0 mA
= 5.0 V
= 5.0 V
= 5.0 V
A
= 150
°
C
MIN
0.58
200
6.0
50
50
45
MAX
0.25
0.65
0.77
450
5.0
0.7
15
www.fairchildsemi.com
Units
nA
μA
V
V
V
V
V
V
V
V