FDMS86300DC Fairchild Semiconductor, FDMS86300DC Datasheet

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FDMS86300DC

Manufacturer Part Number
FDMS86300DC
Description
Manufacturer
Fairchild Semiconductor
Datasheet
©2012 Fairchild Semiconductor Corporation
FDMS86300DC Rev. C1
FDMS86300DC
N-Channel Dual Cool
80 V, 60 A, 3.1 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
R
R
R
R
R
D
DS
GS
AS
D
J
θJC
θJC
θJA
θJA
θJA
θJA
θJA
Dual Cool
Max r
Max r
High performance technology for extremely low r
100% UIL Tested
RoHS Compliant
, T
Pin 1
Symbol
Device Marking
STG
DS(on)
DS(on)
86300
TM
= 3.1 mΩ at V
= 4.0 mΩ at V
Top Side Cooling PQFN package
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Top
S
GS
GS
FDMS86300DC
= 10 V, I
= 8 V, I
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
Power 56
D
TM
D
= 21 A
= 24 A
Power Trench
T
G
A
= 25 °C unless otherwise noted
S
DS(on)
S
Parameter
Dual Cool
S
Bottom
Package
TM
Power 56
D
T
1
T
T
T
T
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s
Advancements in both silicon and Dual Cool
technologies have been combined to offer the lowest r
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
Pin 1
A
C
C
C
A
D
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
®
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
D
MOSFET
D
Reel Size
(Bottom Drain)
(Top Source)
13’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1k)
(Note 1i)
(Note 1j)
(Note 3)
advanced
S
S
G
S
Tape Width
12 mm
Power
-55 to +150
Ratings
148
150
240
125
±20
3.2
2.3
1.0
80
60
24
38
81
16
23
11
Trench
March 2012
www.fairchildsemi.com
®
3000 units
TM
Quantity
D
D
D
D
process.
package
Units
°C/W
DS(on)
mJ
°C
W
V
V
A

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FDMS86300DC Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 86300 FDMS86300DC ©2012 Fairchild Semiconductor Corporation FDMS86300DC Rev ® Power Trench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’ Advancements in both silicon and Dual Cool ...

Page 2

... Gate to Drain “Miller” Charge gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr ©2012 Fairchild Semiconductor Corporation FDMS86300DC Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 ° ...

Page 3

... Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 Starting 0.3 mH ©2012 Fairchild Semiconductor Corporation FDMS86300DC Rev °C/W when mounted pad copper 2 pad copper 2 pad copper 2 ...

Page 4

... DUTY CYCLE = 0.5% MAX 120 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMS86300DC Rev °C unless otherwise noted 6 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 5 ...

Page 5

... J 0 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMS86300DC Rev °C unless otherwise noted J 10000 1000 100 60 80 150 120 100 C ...

Page 6

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMS86300DC Rev °C unless otherwise noted J SINGLE PULSE C/W θ RECTANGULAR PULSE DURATION (sec NOTES: ...

Page 7

... Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMS86300DC Rev www.fairchildsemi.com ...

Page 8

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FDMS86300DC Rev. C1 ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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