FDMS3008SDC Fairchild Semiconductor, FDMS3008SDC Datasheet

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FDMS3008SDC

Manufacturer Part Number
FDMS3008SDC
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS3008SDC
Manufacturer:
Fairchild/ON Semiconductor
Quantity:
120
©2011 Fairchild Semiconductor Corporation
FDMS3008SDC Rev.C
FDMS3008SDC
N-Channel Dual Cool
30 V, 49 A, 2.6 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
dv/dt
P
T
R
R
R
R
R
R
R
D
J
Dual Cool
Max r
Max r
High performance technology for extremely low r
SyncFET Schottky Body Diode
RoHS Compliant
DS
GS
AS
D
θJC
θJC
θJA
θJA
θJA
θJA
θJA
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
3008S
TM
= 3.3 mΩ at V
= 2.6 mΩ at V
Top Side Cooling PQFN package
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Top
GS
GS
FDMS3008SDC
= 4.5 V, I
= 10 V, I
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
Power 56
TM
D
D
= 28 A
= 22 A
PowerTrench
D
T
A
D
= 25°C unless otherwise noted
DS(on)
D
Parameter
Pin 1
Dual Cool
D
Bottom
Package
TM
1
Power 56
S
T
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s
Advancements in both silicon and Dual Cool
technologies have been combined to offer the lowest r
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance. This device has the
added benefit of an efficient monolithic Schottky body diode.
Applications
T
T
T
T
A
A
®
S
C
C
C
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
S
SyncFET
G
Reel Size
(Bottom Drain)
(Top Source)
13’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1k)
(Note 1i)
(Note 1j)
(Note 4)
(Note 3)
(Note 5)
advanced
D
D
D
D
TM
5
6
7
8
Tape Width
12 mm
PowerTrench
-55 to +150
Ratings
±20
140
200
112
3.5
1.6
2.3
3.3
38
81
16
23
30
49
29
78
11
®
www.fairchildsemi.com
August 2011
3000 units
TM
Quantity
4
3
2
1
process.
package
G
S
S
S
Units
°C/W
V/ns
DS(on)
mJ
°C
W
V
V
A

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FDMS3008SDC Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 3008S FDMS3008SDC ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev.C TM ® PowerTrench SyncFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’ Advancements in both silicon and Dual Cool ...

Page 2

... Gate to Drain “Miller” Charge gd Drain-Source Diode Characteristics V Source-Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev 25°C unless otherwise noted J Test Conditions mA mA, referenced to 25°C D ...

Page 3

... As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. ≤ di/dt ≤ 210 A/μs, V ≤ Starting DSS ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev °C/W when mounted pad copper 2 pad copper 2 pad copper ...

Page 4

... DUTY CYCLE = 0.5% MAX 150 125 J 100 2.0 2.5 3 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev 25°C unless otherwise noted J μ s 1.5 2 100 125 150 200 100 0.1 0. -55 ...

Page 5

... J 0 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev 25°C unless otherwise noted J 5000 = 15 V 1000 100 150 120 100 ...

Page 6

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0005 - Figure 13. ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev 25°C unless otherwise noted J SINGLE PULSE C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve ...

Page 7

... TIME (ns) Figure 14. FDMS3008SDC SyncFET body diode reverse recovery characteristic ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev.C (continued) Schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. This will increase the power in the device. 0.01 0.001 μ ...

Page 8

... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev.C 8 www.fairchildsemi.com ...

Page 9

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev.C ® * PDP SPM™ Power-SPM™ ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ ...

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