FDMS8558S Fairchild Semiconductor, FDMS8558S Datasheet

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FDMS8558S

Manufacturer Part Number
FDMS8558S
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS8558S
Manufacturer:
Fairchild/ON Semiconductor
Quantity:
6 080
Part Number:
FDMS8558SDC
Manufacturer:
Fairchild/ON Semiconductor
Quantity:
9 499
©2012 Fairchild Semiconductor Corporation
FDMS8558S Rev.D1
FDMS8558S
N-Channel PowerTrench
25 V, 90 A, 1.5 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
Max r
Max r
High performance technology for extremely low r
SyncFET
RoHS Compliant
θJC
θJA
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
09OD
TM
= 1.5 mΩ at V
= 1.7 mΩ at V
Schottky Body Diode
Top
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
GS
GS
FDMS8558S
= 10 V, I
= 4.5 V, I
-Continuous
-Continuous (Package limited)
Power 56
-Pulsed
Device
D
D
= 33 A
= 31 A
T
®
D
A
= 25°C unless otherwise noted
D
SyncFET
DS(on)
Parameter
D
D
Bottom
Power 56
Package
1
S
TM
S
T
T
T
T
T
T
A
General Description
This N-Channel SyncFET
Semiconductor’s
Advancements in both silicon and package technologies have
been combined to offer the lowest r
excellent switching performance by extremely low Junction-to-
Ambient thermal resistance. This device has the added benefit
of an efficient monolithic Schottky body diode.
Applications
C
C
A
C
A
S
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
= 25 °C
Pin 1
G
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1a)
D
D
D
D
(Note 3)
advanced
5
6
7
8
TM
Tape Width
is produced using Fairchild
12 mm
-55 to +150
PowerTrench
Ratings
DS(on)
140
145
2.5
1.6
25
12
90
33
78
50
while maintaining
April 2012
www.fairchildsemi.com
4
3
2
1
®
3000 units
Quantity
G
S
S
S
process.
Units
°C/W
mJ
°C
W
V
V
A

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FDMS8558S Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 09OD FDMS8558S ©2012 Fairchild Semiconductor Corporation FDMS8558S Rev.D1 ® TM SyncFET General Description = 33 A This N-Channel SyncFET D Semiconductor’ Advancements in both silicon and package technologies have ...

Page 2

... FR-4 board using a specified pad copper as shown below. R θJA by the user's board design. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 145 mJ is based on starting ©2012 Fairchild Semiconductor Corporation FDMS8558S Rev. °C unless otherwise noted J Test Conditions mA mA, referenced to 25 ° ...

Page 3

... 100 125 1.2 1.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMS8558S Rev. °C unless otherwise noted 2 μ s 0.6 0.8 Figure 100 125 150 200 100 ...

Page 4

... MAX RATED J 0 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMS8558S Rev. °C unless otherwise noted J 10000 1000 100 ...

Page 5

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 1E Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMS8558S Rev. °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION ( NOTES: ...

Page 6

... SyncFET Schottky body diode Characteristics TM Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDMS8558S ...

Page 7

... Dimensional Outline and Pad Layout PKG PIN #1 1 IDENT MAY APPEAR AS OPTIONAL SIDE VIEW 1.27 (0.39) 1 0.71 0.44 CHAMFER CORNER AS PIN #1 IDENT MAY APPEAR AS OPTIONAL 8 BOTTOM VIEW 0.10 C 0.08 C 1.10 0.90 OPTION - A (SAWN TYPE) ©2012 Fairchild Semiconductor Corporation FDMS8558S Rev.D1 5.10 A 4.90 PKG 0.77 4.52 3.75 6.25 5.90 1.27 4 TOP VIEW 1.27 SEE DETAIL A 3.81 0.46 (8X) 0.36 0. (0.50) 4 ...

Page 8

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FDMS8558S Rev.D1 ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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