FDMC86116LZ Fairchild Semiconductor, FDMC86116LZ Datasheet

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FDMC86116LZ

Manufacturer Part Number
FDMC86116LZ
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
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Part Number:
FDMC86116LZ
Manufacturer:
Fairchild/ON Semiconductor
Quantity:
61 078
©2011 Fairchild Semiconductor Corporation
FDMC86116LZ Rev.C
FDMC86116LZ
N-Channel Power Trench
100 V, 7.5 A, 103 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
θJC
θJA
Max r
Max r
HBM ESD protection level > 3 KV typical (Note 4)
100% UIL Tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMC86116Z
DS(on)
DS(on)
= 103 mΩ at V
= 153 mΩ at V
1 2 3 4
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
8
Top
7
6
GS
GS
FDMC86116LZ
= 10 V, I
= 4.5 V, I
5
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
MLP 3.3x3.3
D
D
= 3.3 A
= 2.7 A
T
A
®
= 25 °C unless otherwise noted
Parameter
MOSFET
G
S
D D D D
Power 33
Package
Bottom
S
S
1
T
T
T
T
T
General Description
This
Fairchild Semiconductor‘s advanced Power Trench
that has been special tailored to minimize the on-state
resistance and yet maintain superior switching performance.
G-S zener has been added to enhance ESD voltage level.
Application
C
C
A
C
A
= 25 °C
= 25 °C
= 25 °C
= 25 °C
DC - DC Conversion
= 25 °C
N-Channel logic Level MOSFETs are produced using
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
S
S
S
G
(Note 3)
Tape Width
12 mm
-55 to +150
Ratings
100
±20
6.5
7.5
9.6
3.3
2.3
53
15
12
19
December 2011
www.fairchildsemi.com
D
D
D
D
3000 units
Quantity
®
process
Units
°C/W
mJ
°C
W
V
V
A

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FDMC86116LZ Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMC86116Z FDMC86116LZ ©2011 Fairchild Semiconductor Corporation FDMC86116LZ Rev.C ® MOSFET General Description = 3.3 A This N-Channel logic Level MOSFETs are produced using D Fairchild Semiconductor‘s advanced Power Trench = 2 that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... Starting N-ch 1 The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2011 Fairchild Semiconductor Corporation FDMC86116LZ Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μ ...

Page 3

... 150 - GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMC86116LZ Rev °C unless otherwise noted μ 500 400 300 200 ...

Page 4

... Switching Capability Limited by package 6.5 C/W θ CASE TEMPERATURE ( , T C Figure 11. Maximum Continuous Drain Current vs Case Temperature ©2011 Fairchild Semiconductor Corporation FDMC86116LZ Rev °C unless otherwise noted J 1000 100 ...

Page 5

... Figure 13. Single Pulse Maximum Power Dissipation 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 14. ©2011 Fairchild Semiconductor Corporation FDMC86116LZ Rev °C unless otherwise noted PULSE WIDTH (sec) SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec) ...

Page 6

... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMC86116LZ Rev.C 6 www.fairchildsemi.com ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMC86116LZ Rev.C ® tm ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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