FDMS86250 Fairchild Semiconductor, FDMS86250 Datasheet

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FDMS86250

Manufacturer Part Number
FDMS86250
Description
Manufacturer
Fairchild Semiconductor
Datasheet
©2011 Fairchild Semiconductor Corporation
FDMS86250 Rev. C
FDMS86250
N-Channel PowerTrench
150 V, 20 A, 25 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
Max r
Max r
Advanced package and silicon combination for low r
high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMS86250
DS(on)
DS(on)
= 33 mΩ at V
= 25 mΩ at V
Top
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
GS
GS
FDMS86250
= 6 V, I
= 10 V, I
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
Power 56
D
D
= 5.8 A
= 6.7 A
T
®
A
= 25 °C unless otherwise noted
D
MOSFET
D
Parameter
DS(on)
D
D
Bottom
Power 56
Package
and
1
S
T
T
T
T
T
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
S
C
A
C
C
A
= 25 °C
= 25 °C
DC-DC Conversion
= 25 °C
= 25 °C
= 25 °C
S
Pin 1
G
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
S
S
G
S
(Note 3)
Tape Width
12 mm
-55 to +150
Ratings
150
±20
180
1.3
6.7
2.5
20
42
50
96
50
®
December 2011
process that has
www.fairchildsemi.com
3000 units
Quantity
D
D
D
D
Units
°C/W
mJ
°C
W
V
V
A

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FDMS86250 Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS86250 FDMS86250 ©2011 Fairchild Semiconductor Corporation FDMS86250 Rev. C ® MOSFET General Description This N-Channel MOSFET is produced using Fairchild = 6 Semiconductor’s advanced Power Trench = 5 been especially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3. Starting mH ©2011 Fairchild Semiconductor Corporation FDMS86250 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C ...

Page 3

... 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS86250 Rev °C unless otherwise noted 5 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 4 ...

Page 4

... MAX RATED J 0. 125 C/W θ 0.001 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS86250 Rev °C unless otherwise noted J 5000 V = 1000 V = 100 100 C J ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMS86250 Rev °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec ...

Page 6

... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMS86250 Rev www.fairchildsemi.com ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMS86250 Rev. C ® tm ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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