FDMC8010 Fairchild Semiconductor, FDMC8010 Datasheet

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FDMC8010

Manufacturer Part Number
FDMC8010
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2011 Fairchild Semiconductor Corporation
FDMC8010 Rev.C
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMC8010
N-Channel PowerTrench
30 V, 75 A, 1.3 mΩ
Features
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
Max r
Max r
High performance technology for extremely low r
Termination is Lead-free and RoHS Compliant
, T
Symbol
Device Marking
STG
FDMC8010
DS(on)
DS(on)
= 1.3 mΩ at V
= 1.8 mΩ at V
Top
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalance Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Pin 1
GS
GS
FDMC8010
Power 33
= 10 V, I
= 4.5 V, I
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
D
D
D
= 30 A
= 25 A
D
T
®
A
D
= 25 °C unless otherwise noted
Bottom
MOSFET
D
Parameter
DS(on)
Pin 1
Power 33
Package
1
S
S
T
T
T
T
T
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
been especially tailored to minimize the on-state resistance. This
device is well suited for applications where ultra low r
required in small spaces such as High performance VRM, POL
and Oring functions.
Applications
A
A
C
C
C
S
= 25 °C
DC - DC Buck Converters
Point of Load
High Efficiency Load Switch and Low Side Switching
Oring FET
= 25 °C
= 25 °C
= 25 °C
= 25 °C
G
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
S
S
S
G
Tape Width
12 mm
-55 to +150
Ratings
166
120
153
2.4
2.3
30
20
75
30
54
53
®
process that has
December 2011
www.fairchildsemi.com
3000 units
Quantity
D
D
D
D
DS(on)
Units
°C/W
mJ
°C
W
V
V
A
is

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FDMC8010 Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMC8010 FDMC8010 ©2011 Fairchild Semiconductor Corporation FDMC8010 Rev.C ® MOSFET General Description This N-Channel MOSFET is produced using Fairchild = Semiconductor’s advanced PowerTrench = 25 A been especially tailored to minimize the on-state resistance. This ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. ° 153 mJ is based on starting ©2011 Fairchild Semiconductor Corporation FDMC8010 Rev °C unless otherwise noted J Test Conditions mA mA, referenced to 25 °C ...

Page 3

... DUTY CYCLE = 0.5% MAX 150 1.0 1.5 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMC8010 Rev 25°C unless otherwise noted J PULSE DURATION = 80 μ s DUTY CYCLE = 0.5% MAX 0.4 0 100 125 150 - 2.5 3 ...

Page 4

... MAX RATED 0 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMC8010 Rev 25°C unless otherwise noted J 10000 = 1000 100 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 0.001 0.0001 - Figure 13. ©2011 Fairchild Semiconductor Corporation FDMC8010 Rev 25°C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve ...

Page 6

... Dimensional Outline and Pad Layout   ©2011 Fairchild Semiconductor Corporation FDMC8010 Rev.C 6 www.fairchildsemi.com ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMC8010 Rev.C ® tm ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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