FDMS3006SDC Fairchild Semiconductor, FDMS3006SDC Datasheet

no-image

FDMS3006SDC

Manufacturer Part Number
FDMS3006SDC
Description
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS3006SDC
Manufacturer:
Fairchild/ON Semiconductor
Quantity:
252
Part Number:
FDMS3006SDC
Manufacturer:
FAIRCHILD
Quantity:
1 044
©2011 Fairchild Semiconductor Corporation
FDMS3006SDC Rev.C
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMS3006SDC
N-Channel Dual Cool
30 V, 49 A, 1.9 mΩ
Features
V
V
I
E
dv/dt
P
T
R
R
R
R
R
R
R
D
J
DS
GS
AS
D
θJC
θJC
θJA
θJA
θJA
θJA
θJA
Dual Cool
Max r
Max r
High performance technology for extremely low r
SyncFET Schottky Body Diode
RoHS Compliant
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
3006S
TM
= 1.9 mΩ at V
= 2.7 mΩ at V
Top Side Cooling PQFN package
Peak Diode Recovery dv/dt
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Top
GS
GS
FDMS3006SDC
= 10 V, I
= 4.5 V, I
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
Power 56
TM
D
D
= 30 A
= 26 A
G
T
Power Trench
A
S
= 25°C unless otherwise noted
S
Parameter
Dual Cool
DS(on)
S
Bottom
Package
TM
Power 56
1
D
T
T
T
T
T
Pin 1
A
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s
Advancements in both silicon and Dual Cool
technologies have been combined to offer the lowest r
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance. This device has the
added benefit of an efficient monolithic Schottky body diode.
Applications
C
C
C
A
D
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
®
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
D
SyncFET
D
Reel Size
(Bottom Drain)
(Top Source)
13’’
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1a)
(Note 1k)
(Note 1i)
(Note 1j)
(Note 4)
(Note 3)
(Note 5)
advanced
D
D
D
D
TM
5
6
7
8
Tape Width
12 mm
Power
-55 to +150
Ratings
±20
179
200
144
1.8
3.3
2.7
1.4
38
81
16
23
30
49
34
89
11
Trench
www.fairchildsemi.com
August 2011
®
3000 units
TM
Quantity
4
3
2
1
process.
package
G
S
S
Units
S
°C/W
V/ns
mJ
DS(on)
°C
W
V
V
A

Related parts for FDMS3006SDC

FDMS3006SDC Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 3006S FDMS3006SDC ©2011 Fairchild Semiconductor Corporation FDMS3006SDC Rev.C TM ® Power Trench SyncFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’ Advancements in both silicon and Dual Cool ...

Page 2

... Gate to Drain “Miller” Charge gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr ©2011 Fairchild Semiconductor Corporation FDMS3006SDC Rev °C unless otherwise noted J Test Conditions mA mA, referenced to 25 °C D ...

Page 3

... As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. ≤ di/dt ≤ 165 A/μs, V ≤ Starting DSS ©2011 Fairchild Semiconductor Corporation FDMS3006SDC Rev.C 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material °C/W when mounted pad copper mH ...

Page 4

... DUTY CYCLE = 0.5% MAX 150 100 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS3006SDC Rev °C unless otherwise noted J PULSE DURATION = 80 μ s DUTY CYCLE = 0.5% MAX 1.5 2.0 2 100 125 150 125 C o ...

Page 5

... MAX RATED J 0 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS3006SDC Rev °C unless otherwise noted 100 ...

Page 6

... Typical Characteristics 2 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0005 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMS3006SDC Rev °C unless otherwise noted J SINGLE PULSE C/W θ RECTANGULAR PULSE DURATION (sec ...

Page 7

... TIME (ns) Figure 14. FDMS3006S SyncFET body diode reverse recovery characteristic ©2011 Fairchild Semiconductor Corporation FDMS3006SDC Rev.C (continued) Schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. This will increase the power in the device μ ...

Page 8

... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMS3006SDC Rev.C 8 www.fairchildsemi.com ...

Page 9

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMS3006SDC Rev.C ® * PDP SPM™ Power-SPM™ ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ ...

Related keywords