FDMS3006SDC Fairchild Semiconductor, FDMS3006SDC Datasheet - Page 7
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FDMS3006SDC
Manufacturer Part Number
FDMS3006SDC
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDMS3006SDC.pdf
(9 pages)
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©2011 Fairchild Semiconductor Corporation
FDMS3006SDC Rev.C
Typical Characteristics
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS3006S.
diode reverse recovery characteristic
Figure 14. FDMS3006S SyncFET body
35
30
25
20
15
10
-5
5
0
0
50
100
TIME (ns)
didt = 300 A/
150
(continued)
μ
s
200
250
7
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
10
10
10
10
10
-2
-3
-4
-5
-6
0
Figure 15. SyncFET body diode reverse
leakage versus drain-source voltage
5
V
DS
10
, REVERSE VOLTAGE (V)
T
T
T
J
J
J
= 125
= 100
= 25
15
o
C
o
o
C
C
20
25
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30