FDD86113LZ Fairchild Semiconductor, FDD86113LZ Datasheet

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FDD86113LZ

Manufacturer Part Number
FDD86113LZ
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number:
FDD86113LZ
Manufacturer:
FAIRCHILD
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3 792
Part Number:
FDD86113LZ
Manufacturer:
Fairchild/ON Semiconductor
Quantity:
4 630
FDD86113LZ Rev. C
©2011 Fairchild Semiconductor Corporation
FDD86113LZ
N-Channel PowerTrench
100 V, 5.5 A, 104 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
Max r
Max r
HBM ESD protection level > 6 kV typical (Note 4)
High performance trench technology for extremely low r
High power and current handling capability in a widely used
surface mount package
100% UIL Tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDD86113LZ
DS(on)
DS(on)
= 104 mΩ at V
= 156 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
S
GS
GS
FDD86113LZ
= 4.5 V, I
= 10 V, I
-Pulsed
-Continuous (Silicon limited)
-Continuous
Device
-Continuous(Package limited)
(T O -252)
D -P A K
T O -2 52
D
D
= 4.2 A
= 3.4 A
T
®
C
= 25 °C unless otherwise noted
MOSFET
Parameter
D
D-PAK(TO-252)
DS(on)
Package
T
T
A
C
1
= 25 °C
= 25 °C
General Description
This N-Channel logic Level MOSFETs are produced using
Fairchild Semiconductor‘s advanced Power Trench
that has been special tailored to minimize the on-state resistance
and yet maintain superior switching performance. G-S zener has
been added to enhance ESD voltage level.
Application
DC-DC conversion
T
T
T
C
C
A
= 25 °C
= 25 °C
= 25 °C (Note 1a)
Reel Size
G
13 ’’
(Note 1a)
(Note 1a)
(Note 1)
(Note 3)
D
S
Tape Width
12 mm
-55 to +150
Ratings
11.8
100
±20
5.5
4.2
3.1
4.3
15
29
12
9
December 2011
www.fairchildsemi.com
2500 units
Quantity
®
process
Units
°C/W
mJ
°C
W
V
V
A

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FDD86113LZ Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDD86113LZ FDD86113LZ ©2011 Fairchild Semiconductor Corporation FDD86113LZ Rev. C ® MOSFET General Description = 4.2 A This N-Channel logic Level MOSFETs are produced using D Fairchild Semiconductor‘s advanced Power Trench = 3.4 A that has been special tailored to minimize the on-state resistance D and yet maintain superior switching performance ...

Page 2

... Starting ° mH The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2011 Fairchild Semiconductor Corporation FDD86113LZ Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μ ...

Page 3

... 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDD86113LZ Rev °C unless otherwise noted 3 μ 2 400 300 200 100 50 75 ...

Page 4

... V GATE TO SOURCE VOLTAGE ( Figure 11. Gate Leakage Current vs Gate to Source Voltage ©2011 Fairchild Semiconductor Corporation FDD86113LZ Rev °C unless otherwise noted J 1000 100 ...

Page 5

... Figure 13. Single Pulse Maximum Power Dissipation 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0. Figure 14. ©2011 Fairchild Semiconductor Corporation FDD86113LZ Rev °C unless otherwise noted PULSE WIDTH (sec) SINGLE PULSE 4.3 C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Case Transient Thermal Response Curve ...

Page 6

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDD86113LZ Rev. C ® tm ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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