FDMS86500DC Fairchild Semiconductor, FDMS86500DC Datasheet

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FDMS86500DC

Manufacturer Part Number
FDMS86500DC
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FDMS86500DC
Manufacturer:
TI
Quantity:
1 001
Price:
©2011 Fairchild Semiconductor Corporation
FDMS86500DC Rev. C
FDMS86500DC
N-Channel Dual Cool
60 V, 60 A, 2.3 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
R
R
R
R
R
D
DS
GS
AS
D
J
θJC
θJC
θJA
θJA
θJA
θJA
θJA
Dual Cool
Max r
Max r
High performance technology for extremely low r
100% UIL Tested
RoHS Compliant
, T
Pin 1
Symbol
Device Marking
STG
DS(on)
DS(on)
86500
TM
= 2.3 mΩ at V
= 3.3 mΩ at V
Top Side Cooling PQFN package
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Top
S
GS
GS
FDMS86500DC
= 10 V, I
= 8 V, I
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
Power 56
D
TM
D
= 24 A
= 29 A
G
Power Trench
T
A
S
= 25 °C unless otherwise noted
S
DS(on)
Parameter
Dual Cool
S
Bottom
Package
TM
Power 56
D
1
T
T
T
T
T
Pin 1
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s
Advancements in both silicon and Dual Cool
technologies have been combined to offer the lowest r
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
C
C
A
C
A
D
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
®
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
D
MOSFET
D
Reel Size
(Bottom Drain)
(Top Source)
13’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1k)
(Note 1i)
(Note 1j)
(Note 3)
advanced
S
S
G
S
Tape Width
12 mm
Power
-55 to +150
Ratings
±20
177
200
317
125
3.2
2.8
1.0
60
60
29
38
81
16
23
11
Trench
December 2011
www.fairchildsemi.com
®
3000 units
TM
Quantity
D
D
D
D
process.
package
Units
°C/W
DS(on)
mJ
°C
W
V
V
A

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FDMS86500DC Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 86500 FDMS86500DC ©2011 Fairchild Semiconductor Corporation FDMS86500DC Rev ® Power Trench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’ Advancements in both silicon and Dual Cool ...

Page 2

... Gate to Drain “Miller” Charge gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr ©2011 Fairchild Semiconductor Corporation FDMS86500DC Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25° ...

Page 3

... Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 Starting N-ch 0.3 mH ©2011 Fairchild Semiconductor Corporation FDMS86500DC Rev °C/W when mounted pad copper 2 pad copper 2 pad copper 2 ...

Page 4

... DUTY CYCLE = 0.5% MAX 150 100 T = 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS86500DC Rev °C unless otherwise noted 6 μ 100 125 150 ...

Page 5

... C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS86500DC Rev °C unless otherwise noted J 10000 1000 100 60 80 180 150 o C 120 100 ...

Page 6

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMS86500DC Rev °C unless otherwise noted J SINGLE PULSE C/W θ RECTANGULAR PULSE DURATION (sec NOTES: ...

Page 7

... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMS86500DC Rev www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMS86500DC Rev. C ® tm ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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