BC857CDW1T1G ON Semiconductor, BC857CDW1T1G Datasheet - Page 5

TRANS PNP DUAL 45V 100MA SOT-363

BC857CDW1T1G

Manufacturer Part Number
BC857CDW1T1G
Description
TRANS PNP DUAL 45V 100MA SOT-363
Manufacturer
ON Semiconductor
Datasheet

Specifications of BC857CDW1T1G

Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
420 @ 2mA, 5V
Power - Max
380mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
- 0.1 A
Maximum Dc Collector Current
0.1 A
Power Dissipation
380 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
420 at 2 mA at 5 V
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC857CDW1T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BC857CDW1T1G
Manufacturer:
INF
Quantity:
5 694
Part Number:
BC857CDW1T1G
Manufacturer:
LRC/乐山
Quantity:
20 000
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
BC856BDW1T1G
BC856BDW1T3G
BC857BDW1T1G
BC857CDW1T1G
BC858CDW1T1G
-200
-100
-5.0
-2.0
-50
-10
0.001
0.01
1.0
0.1
-1.0
0
Figure 14. Active Region Safe Operating Area
0.05
0.02
0.01
D = 0.5
0.1
0.2
SINGLE PULSE
Device
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-5.0
T
1.0
A
= 25°C
-10
T
BC558
BC557
BC556
J
1 s
= 25°C
Device Marking
10
-30 -45 -65 -100
3B
3B
3G
3F
3L
3 ms
Figure 13. Thermal Response
http://onsemi.com
100
5
t, TIME (ms)
of the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
or T
are valid for duty cycles to 10% provided T
T
case or ambient temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by the secondary breakdown.
J(pk)
P
The data of Figure 14 is based upon T
(pk)
DUTY CYCLE, D = t
A
The safe operating area curves indicate I
is variable depending upon conditions. Pulse curves
may be calculated from the data in Figure 13. At high
1.0 k
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
Package
t
1
t
2
1
/t
2
10 k
Z
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
qJA
J(pk)
qJA
(t) = r(t) R
10,000 / Tape & Reel
= 328°C/W MAX
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
− T
C
= P
Shipping
100 k
J(pk)
qJA
(pk)
1
R
J(pk)
qJC
C
= 150°C; T
−V
(t)
≤ 150°C.
CE
limits
1.0 M
C

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