BC857,235 NXP Semiconductors, BC857,235 Datasheet

TRANSISTOR PNP 45V 100MA SOT23

BC857,235

Manufacturer Part Number
BC857,235
Description
TRANSISTOR PNP 45V 100MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC857,235

Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
125 @ 2mA, 5V
Power - Max
250mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
933589740235
BC857 /T3
BC857 /T3
Product data sheet
Supersedes data of 2003 Apr 09
DATA SHEET
BC856; BC857; BC858
PNP general purpose transistors
DISCRETE SEMICONDUCTORS
2004 Jan 16

Related parts for BC857,235

BC857,235 Summary of contents

Page 1

DATA SHEET BC856; BC857; BC858 PNP general purpose transistors Product data sheet Supersedes data of 2003 Apr 09 DISCRETE SEMICONDUCTORS 2004 Jan 16 ...

Page 2

... NXP Semiconductors PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC846, BC847 and BC848. MARKING TYPE NUMBER BC856 ...

Page 3

... NXP Semiconductors PNP general purpose transistors LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO BC856 BC857 BC858 V collector-emitter voltage CEO BC856 BC857 BC858 V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current ...

Page 4

... NXP Semiconductors PNP general purpose transistors CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE BC856 BC857 BC856A; BC857A BC856B; BC857B; BC858B BC857C V collector-emitter saturation voltage CEsat V base-emitter saturation voltage BEsat ...

Page 5

... NXP Semiconductors PNP general purpose transistors 500 handbook, halfpage h FE 400 (1) 300 (2) 200 (3) 100 0 −2 −1 −10 −10 −1 −10 = −5 V. BC857A 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current; typical values. ...

Page 6

... NXP Semiconductors PNP general purpose transistors 1000 handbook, halfpage h FE 800 600 (1) 400 (2) 200 (3) 0 −2 −1 −10 −10 −1 −10 = −5 V. BC857B 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.6 DC current gain as a function of collector current; typical values. ...

Page 7

... NXP Semiconductors PNP general purpose transistors 1000 handbook, halfpage h FE (1) 800 600 (2) 400 (3) 200 0 −2 −1 −10 −10 −1 −10 = −5 V. BC857C 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.10 DC current gain as a function of collector current; typical values. ...

Page 8

... NXP Semiconductors PNP general purpose transistors PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 ...

Page 9

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 10

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

Related keywords