BC857,235 NXP Semiconductors, BC857,235 Datasheet - Page 6

• Manufacturer Part Number: BC857,235
• Description: TRANSISTOR PNP 45V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BC857,235

• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 125 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 933589740235; BC857 /T3; BC857 /T3

NXP Semiconductors
2004 Jan 16
handbook, halfpage
handbook, halfpage
PNP general purpose transistors
V CEsat
BC857B; V
(1) T
(2) T
(3) T
Fig.6
BC857B; I
(1) T
(2) T
(3) T
Fig.8
(mV)
h FE
1000
−10
−10
−10
800
600
400
200
−10
−10
−10
amb
amb
amb
amb
amb
amb
0
4
3
2
−1
−2
= 150 °C.
= 25 °C.
= −55 °C.
= 150 °C.
= 25 °C.
= −55 °C.
DC current gain as a function of collector
current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
C
CE
/I
B
= −5 V.
= 20.
−10
−1
−1
(1)
(3)
(2)
−1
(1)
(2)
(3)
−10
−10
−10
−10
2
I C (mA)
I C (mA)
2
MGT715
MGT717
−10
−10
3
3
6
handbook, halfpage
handbook, halfpage
V BEsat
(mV)
V BE
(mV)
BC857B; V
(1) T
(2) T
(3) T
Fig.7
BC857B; I
(1) T
(2) T
(3) T
Fig.9
−1000
−1200
−1200
−1000
−800
−600
−400
−200
−800
−600
−400
−200
−10
−10
amb
amb
amb
amb
amb
amb
0
0
−2
−1
= −55 °C.
= 25 °C.
= 150 °C.
= −55 °C.
= 25 °C.
= 150 °C.
Base-emitter voltage as a function of
collector current; typical values.
Base-emitter saturation voltage as a
function of collector current; typical values.
C
CE
/I
B
= −5 V.
= 20.
−10
−1
−1
BC856; BC857; BC858
(1)
(2)
(3)
−1
(1)
(2)
(3)
−10
−10
−10
Product data sheet
−10
2
I C (mA)
I C (mA)
2
MGT716
MGT718
−10
−10
3
3