SI8235AB-C-IS1 Silicon Laboratories Inc, SI8235AB-C-IS1 Datasheet - Page 28

• Manufacturer Part Number: SI8235AB-C-IS1
• Description: 2.5KV 4A DUAL LOW SIDE ISOLATED DRIVER ("ISODRIVER"), NB SOI
• Manufacturer: Silicon Laboratories Inc

Specifications of SI8235AB-C-IS1

• Configuration: Low-Side
• Input Type: Non-Inverting
• Delay Time: 60ns
• Current - Peak: 4A
• Number Of Configurations: 2
• Number Of Outputs: 2
• Voltage - Supply: 6.5 V ~ 24 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si823x
4. Applications
The following examples illustrate typical circuit configurations using the Si823x.
4.1. High-Side/Low-Side Driver
Figure 42A shows the Si8230/3 controlled using the VIA and VIB input signals, and Figure 42B shows the Si8231/4
controlled by a single PWM signal.
For both cases, D1 and CB form a conventional bootstrap circuit that allows VOA to operate as a high-side driver
for Q1, which has a maximum drain voltage of 1500 V. VOB is connected as a conventional low-side driver. Note
that the input side of the Si823x requires VDD in the range of 4.5 to 5.5 V, while the VDDA and VDDB output side
supplies must be between 6.5 and 24 V with respect to their respective grounds. The boot-strap start up time will
depend on the CB cap chosen. VDD2 is usually the same as VDDB. Also note that the bypass capacitors on the
Si823x should be located as close to the chip as possible. Moreover, it is recommended that 0.1 and 10 µF bypass
capacitors be used to reduce high frequency noise and maximize performance.
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CONTROLLER
OUT1
OUT2
I/O
1uF
C1
VDDI
RDT
VDDI
GNDI
VIA
VIB
DT
DISABLE
A
Si8230/3
Figure 42. Si823x in Half-Bridge Application
GNDA
GNDB
VDDA
VDDB
VOA
VOB
VDD2
VDDB
1 µF
10uF
C2
C3
D1
CB
1500 V max
Q2
Q1
Rev. 1.1
CONTROLLER
PWMOUT
I/O
1uF
C1
VDDI
RDT
VDDI
GNDI
PWM
DT
DISABLE
B
Si8231/4
GNDA
GNDB
VDDA
VDDB
VOA
VOB
VDD2
VDDB
1 µF
10uF
C2
C3
D1
CB
1500 V max
Q2
Q1