SI8235AB-C-IS1 Silicon Laboratories Inc, SI8235AB-C-IS1 Datasheet - Page 7

• Manufacturer Part Number: SI8235AB-C-IS1
• Description: 2.5KV 4A DUAL LOW SIDE ISOLATED DRIVER ("ISODRIVER"), NB SOI
• Manufacturer: Silicon Laboratories Inc

Specifications of SI8235AB-C-IS1

• Configuration: Low-Side
• Input Type: Non-Inverting
• Delay Time: 60ns
• Current - Peak: 4A
• Number Of Configurations: 2
• Number Of Outputs: 2
• Voltage - Supply: 6.5 V ~ 24 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 1. Electrical Characteristics
4.5 V < VDDI < 5.5 V, VDDA = VDDB = 12 V or 15 V. TA = –40 to +125 °C. Typical specs at 25 °C
Parameter
VDDI Undervoltage Threshold
VDDI Undervoltage Threshold
VDDI Lockout Hysteresis
VDDA, VDDB Undervoltage
Threshold
5 V Threshold
8 V Threshold
10 V Threshold
12.5 V Threshold
VDDA, VDDB Undervoltage
Threshold
5 V Threshold
8 V Threshold
10 V Threshold
12.5 V Threshold
VDDA, VDDB
Lockout Hysteresis
VDDA, VDDB
Lockout Hysteresis
VDDA, VDDB
Lockout Hysteresis
AC Specifications
Minimum Pulse Width
Propagation Delay
Pulse Width Distortion
|t
Minimum Overlap Time
Programmed Dead Time
Output Rise and Fall Time
Notes:
PLH
1. VDDA = VDDB = 12 V for 5, 8, and 10 V UVLO devices; VDDA = VDDB = 15 V for 12.5 V UVLO devices.
2. TDD is the minimum overlap time without triggering overlap protection (Si8230/1/3/4 only).
3. The largest RDT resistor that can be used is 220 k.
- t
PHL
|
2
3
VDDA
VDDA
VDDA
VDDA
VDDA
VDDB
VDDB
VDDB
VDDB
VDDB
t
VDDI
VDDI
VDDI
Symbol
PHL
PWD
TDD
t
DT
R
, t
,t
1
HYS
UV+
UV–
HYS
HYS
HYS
UV+
UV–
F
HYS
HYS
HYS
PLH
UV+
UV–
(Continued)
,
,
,
,
,
UVLO voltage = 10 V or 12.5 V
C
See Figure 36 on page 25.
See Figure 37 on page 25.
See Figure 38 on page 25.
See Figure 39 on page 25.
See Figure 36 on page 25.
See Figure 37 on page 25.
See Figure 38 on page 25.
See Figure 39 on page 25.
C
DT = VDDI, No-Connect
L
Figure 41, RDT = 100 k
L
Figure 41, RDT = 6 k
= 200 pF (Si8233/4/5/6)
VDDA, VDDB falling
UVLO voltage = 5 V
UVLO voltage = 8 V
VDDA, VDDB rising
Rev. 1.1
= 200 pF (Si8230/1/2)
Test Conditions
CL = 200 pF
VDDI falling
VDDI rising
3.60
3.30
5.20
7.50
9.60
12.4
4.90
7.20
9.40
11.6
Min
—
—
—
—
—
—
—
—
—
—
—
—
1000
3.70
5.80
8.60
13.8
5.52
8.10
10.1
12.8
11.1
Typ
250
280
600
900
0.4
4.0
10
30
—
70
—
—
Si823x
5.60
Max
4.45
4.15
6.30
9.40
12.2
14.8
8.70
10.9
13.8
6.0
60
20
12
—
—
—
—
—
—
—
—
Units
mV
mV
mV
mV
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
V
V
V
V
V
V
7