MT46V16M16CY-5B:K TR Micron Technology Inc, MT46V16M16CY-5B:K TR Datasheet - Page 52

DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.6V 60-Pin FBGA T/R

MT46V16M16CY-5B:K TR

Manufacturer Part Number
MT46V16M16CY-5B:K TR
Description
DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.6V 60-Pin FBGA T/R
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46V16M16CY-5B:K TR

Package
60FBGA
Density
256 Mb
Address Bus Width
15 Bit
Operating Supply Voltage
2.6 V
Maximum Clock Rate
400 MHz
Maximum Random Access Time
0.7 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (16Mx16)
Speed
5ns
Interface
Parallel
Voltage - Supply
2.5 V ~ 2.7 V
Package / Case
60-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1445-2
WRITE
Figure 19:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
WRITE Command
Note:
The WRITE command is used to initiate a burst write access to an active row as shown in
Figure 19. The value on the BA0, BA1 inputs selects the bank, and the address provided
on inputs A0–Ai
and configuration, see Table 2 on page 2) selects the starting column location.
BA0, BA1
Address
RAS#
CAS#
WE#
CK#
CKE
A10
EN AP = enable auto precharge; and DIS AP = disable auto precharge.
CS#
CK
HIGH
DIS AP
EN AP
Bank
Col
(
Don’t Care
where Ai is the most significant column address bit for a given density
50
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x4, x8, x16 DDR SDRAM
©2003 Micron Technology, Inc. All rights reserved.
Commands

Related parts for MT46V16M16CY-5B:K TR