M29W128GH70ZA6E NUMONYX, M29W128GH70ZA6E Datasheet - Page 9

• Manufacturer Part Number: M29W128GH70ZA6E
• Description: Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 70ns 64-Pin TBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W128GH70ZA6E

• Package: 64TBGA
• Cell Type: NOR
• Density: 128 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 128
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Table 2.
1. V
Figure 1.
1. Also see
operations.
PP
/WP may be left floating as it is internally connected to a pull-up resistor which enables program/erase
DQ8-DQ14
V
DQ0-DQ7
DQ15A 1
A0-A22
PP
Name
BYTE
V
Appendix A
V
V
NC
RP
RB
CCQ
/WP
W
E
G
CC
SS
Logic diagram
Signal names
(1)
and
Table 35
A0-A22
BYTE
Address inputs
Data inputs/outputs
Data inputs/outputs
Data input/output or address input
Chip enable
Output enable
Write enable
Reset
Ready/busy output
Byte/word organization select
Input/output buffer supply voltage
Supply voltage
V
Ground
Not connected
PP
RP
W
G
E
/write protect
for a full listing of the block addresses.
23
V CC
M29W128GH
M29W128GL
V CCQ
Description
V SS
V PP /WP
15
DQ0-DQ14
DQ15A-1
RB
AI13330b
Supply/Input
Direction
Supply
Supply
Output
Inputs
Input
Input
Input
Input
Input
I/O
I/O
I/O
–
–
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