M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 38

• Manufacturer Part Number: M29W640GB60ZA6E
• Description: Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W640GB60ZA6E

• Package: 48TFBGA
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 127
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Figure 7.
1. Only the third and fourth cycles of the Program command are represented. The Program command is followed by the check
2. PA is address of the memory location to be programmed. PD is the data to be programmed.
3. DQ7 is the complement of the data bit being programmed to DQ7 (see
4. Addresses differ in x8 mode.
5. See
38/90
of status register data polling bit.
Table 19: Write AC characteristics
Chip enable controlled program waveforms (8-bit mode)
DQ0-DQ7/
DQ8-DQ15
A0-A20/
A–1
W
G
E
tAVAV
tWLEL
tGHEL
tDVEH
tELEH
and
3rd cycle
Table 18: Read AC characteristics
tAVEL
555h
AOh
4th cycle
tEHWH
tEHDX
PA
tEHEL1
PD
tELAX
tWHWH1
Section 5.1: Data polling bit
Data Polling
PA
DQ7 D OUT
for details on the timings.
(DQ7)).
AI12780