M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 63
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M29W640GB60ZA6E
Manufacturer Part Number
M29W640GB60ZA6E
Description
Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
Manufacturer
NUMONYX
Datasheet
1.M29W640GH70NB6E.pdf
(90 pages)
Specifications of M29W640GB60ZA6E
Package
48TFBGA
Cell Type
NOR
Density
64 Mb
Architecture
Sectored
Block Organization
Asymmetrical
Location Of Boot Block
Bottom
Typical Operating Supply Voltage
3|3.3 V
Sector Size
8KByte x 8|64KByte x 127
Timing Type
Asynchronous
Operating Temperature
-40 to 85 °C
Interface Type
Parallel
Table 28.
Block Kbytes/Kwords
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
M29W640GH and M29W640GL block addresses (continued)
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Protection block group
Protection group
Protection group
Protection group
Protection group
Protection group
Protection group
Protection group
Protection group
2C0000h–2CFFFFh
2D0000h–2DFFFFh
3C0000h–3CFFFFh
3D0000h–3DFFFFh
2A0000h–2AFFFFh
2B0000h–2BFFFFh
2E0000h–2EFFFFh
3A0000h–3AFFFFh
3B0000h–3BFFFFh
3E0000h–3EFFFFh
2F0000h–2FFFFFh
3F0000h–3FFFFFh
200000h–20FFFFh
210000h–21FFFFh
220000h–22FFFFh
230000h–23FFFFh
240000h–24FFFFh
250000h–25FFFFh
260000h–26FFFFh
270000h–27FFFFh
280000h–28FFFFh
290000h–29FFFFh
300000h–30FFFFh
310000h–31FFFFh
320000h–32FFFFh
330000h–33FFFFh
340000h–34FFFFh
350000h–35FFFFh
360000h–36FFFFh
370000h–37FFFFh
380000h–38FFFFh
390000h–39FFFFh
(x8)
1C0000h–1C7FFFh
1C8000h–1CFFFFh
1D0000h–1D7FFFh
1D8000h–1DFFFFh
1A0000h–1A7FFFh
1A8000h–1AFFFFh
1B0000h–1B7FFFh
1B8000h–1BFFFFh
1E0000h–1E7FFFh
1E8000h–1EFFFFh
108000h–10FFFFh
128000h–12FFFFh
138000h–13FFFFh
148000h–14FFFFh
158000h–15FFFFh
168000h–16FFFFh
178000h–17FFFFh
188000h–18FFFFh
198000h–19FFFFh
1F0000h–1F7FFFh
1F8000h–1FFFFFh
100000h–107FFFh
120000h–127FFFh
130000h–137FFFh
140000h–147FFFh
150000h–157FFFh
160000h–167FFFh
170000h–177FFFh
180000h–187FFFh
190000h–197FFFh
110000h–117FFFh
118000h–11FFFFh
(x16)
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