HSDL-5420-031 Lite-On Electronics, HSDL-5420-031 Datasheet - Page 14

• Manufacturer Part Number: HSDL-5420-031
• Description: Photodiode PIN Chip 875nm 0.5A/W Sensitivity 2-Pin Subminiature SMT T/R
• Manufacturer: Lite-On Electronics
• Type: Chipr

Specifications of HSDL-5420-031

• Package: 2Subminiature SMT
• Photodiode Material: AlGaAs
• Lens Type: Epoxy
• Wavelength: 875 nm
• Maximum Light Current: 6(Typ) uA
• Maximum Rise Time Range: 1 to 15 ns
• Maximum Dark Current: 5 nA
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 40V
• Forward Voltage: 0.8V
• Responsivity: 0.5A/W
• Peak Wavelength: 875nm
• Dark Current (max): 5nA
• Power Dissipation: 150mW
• Light Current: 6uA
• Rise Time: 7.5ns
• Fall Time: 7.5ns
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 2
• Package Type: SMT
• Lead Free Status / Rohs Status: Supplier Unconfirmed

HSDL-54xx Optical Characteristics at T
Parameter
Photocurrent
Temperature Coefficient of I
Radiant Sensitive Area
Absolute Spectral Sensitivity
Viewing Angle
Wavelength of Peak Sensitivity
Spectral Bandwidth
Quantum Efficiency
Noise Equivalent Power
Detectivity
Optical Rise and Fall Times, 10%-90%
Bandwidth
14
HSDL-5400
HSDL-5420
HSDL-5400
HSDL-5420
PH
A
Symbol
I
∆I
A
S
2q
l
∆l
h
NEP
D
t
f
= 25°C
PH
c
r
PK
/t
PH
1/2
f
/∆T
Min.
0.8
3.0
Typ.
1.6
6.0
0.1
0.15
0.5
110
28
875
770-
1000
70
6.2 x
10
6.3 x
10
7.5
50
-15
12
Max.
Unit
µA
%/K
mm
A/W
deg
nm
nm
%
W/Hz
cm*
Hz
ns
MHz
1/2
2
/W
1/2
Condition
E
l
V
E
l
V
E
l
V
E
V
E
V
E
l
V
V
l
V
l
V
R
l
V
R
l
e
e
e
e
e
e
PK
R
PK
R
PK
R
R
R
PK
R
R
PK
R
PK
R
L
PK
R
L
PK
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
= 1 kΩ
= 1 kΩ
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 875 nm
= 875 nm
= 875 nm
= 875 nm,
= 875 nm
= 875 nm
= 875 nm
= 875 nm
2
2
2
2
2
2
Ref.
Fig 14,
15
Fig. 13
Fig. 18
Fig. 19
Fig. 17
Fig. 17