SI8236AA-C-IM Silicon Laboratories Inc, SI8236AA-C-IM Datasheet - Page 8

• Manufacturer Part Number: SI8236AA-C-IM
• Description: MOSFET DRVR 4A 2-OUT Half Brdg Non-Inv 14-Pin LGA
• Manufacturer: Silicon Laboratories Inc

Specifications of SI8236AA-C-IM

• Package: 14LGA
• Driver Configuration: Non-Inverting
• Peak Output Current: 4 A
• Input Logic Compatibility: TTL
• Number Of Outputs: 2
• Output Resistance: 2.7 Ohm
• Maximum Rise Time: 20 ns
• Maximum Power Dissipation: 1200 mW
• Maximum Supply Current: 2.5(Typ) mA
• Operating Temperature: -40 to 125 °C
• Configuration: Low-Side
• Input Type: Non-Inverting
• Delay Time: 60ns
• Current - Peak: 4A
• Number Of Configurations: 2
• Voltage - Supply: 6.5 V ~ 24 V
• Mounting Type: Surface Mount
• Package / Case: 14-VFLGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si823x
Table 1. Electrical Characteristics
4.5 V < VDDI < 5.5 V, VDDA = VDDB = 12 V or 15 V. TA = –40 to +125 °C. Typical specs at 25 °C
8
Parameter
Shutdown Time from
Disable True
Restart Time from
Disable False
Device Start-up Time
Common Mode
Transient Immunity
Notes:
1. VDDA = VDDB = 12 V for 5, 8, and 10 V UVLO devices; VDDA = VDDB = 15 V for 12.5 V UVLO devices.
2. TDD is the minimum overlap time without triggering overlap protection (Si8230/1/3/4 only).
3. The largest RDT resistor that can be used is 220 k.
t
Symbol
RESTART
t
CMTI
START
t
SD
1
(Continued)
VIA, VIB, PWM = VDDI or 0 V
Time from VDD_ = VDD_UV+
to VOA, VOB = VIA, VIB
Rev. 1.1
Test Conditions
Min
20
—
—
—
Typ
—
—
—
45
Max
60
60
40
—
Units
kV/µs
ns
ns
µs