MUN5131DW1T1G ON Semiconductor, MUN5131DW1T1G Datasheet - Page 11

• Manufacturer Part Number: MUN5131DW1T1G
• Description: TRANS BRT PNP DUAL 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5131DW1T1G

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 8 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

0.001
12
10
0.01
8
6
4
2
0
0.1
0
1
0
I
C
5
/I
B
V
= 10
R
10
Figure 29. Output Capacitance
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
C
Figure 27. V
15
, COLLECTOR CURRENT (mA)
−25°C
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5116DW1T1G
20
20
25
0.1
CE(sat)
25°C
10
1
0
Figure 31. Input Voltage versus Output Current
30
T
30
A
versus I
75°C
= −25°C
75°C
35
10
f = 1 MHz
l
T
E
I
A
C
40
= 0 V
, COLLECTOR CURRENT (mA)
= 25°C
C
25°C
40
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45
20
50
50
11
0.001
1000
0.01
100
30
100
0.1
10
10
1
1
0
1
Figure 30. Output Current versus Input Voltage
75°C
T
A
V
1
O
= −25°C
T
= 0.2 V
40
A
= −25°C
2
Figure 28. DC Current Gain
I
25°C
C
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
3
50
4
5
10
75°C
6
25°C
V
7
O
= 5 V
8
V
CE
= 10 V
9
100
10