MUN5131DW1T1G ON Semiconductor, MUN5131DW1T1G Datasheet - Page 6

• Manufacturer Part Number: MUN5131DW1T1G
• Description: TRANS BRT PNP DUAL 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5131DW1T1G

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 8 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

0.01
0.1
4
3
2
1
0
1
0
0
I
C
/I
B
= 10
10
Figure 4. Output Capacitance
V
R
Figure 2. V
, REVERSE BIAS VOLTAGE (VOLTS)
20
I
C
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5111DW1T1G
20
CE(sat)
100
0.1
10
30
1
T
versus I
0
A
75°C
Figure 6. Input Voltage versus Output Current
= -25°C
V
O
= 0.2 V
f = 1 MHz
l
T
40
C
E
40
A
= 0 V
10
= 25°C
I
25°C
C
http://onsemi.com
, COLLECTOR CURRENT (mA)
50
50
20
6
0.001
1000
0.01
100
100
0.1
10
10
T
1
30
A
1
= -25°C
0
Figure 5. Output Current versus Input Voltage
75°C
1
75°C
25°C
40
2
Figure 3. DC Current Gain
I
C
V
, COLLECTOR CURRENT (mA)
in
T
3
, INPUT VOLTAGE (VOLTS)
A
25°C
= -25°C
50
4
10
5
6
V
O
7
= 5 V
V
8
T
CE
A
= 75°C
= 10 V
-25°C
9
25°C
100
10