MUN5331DW1T1G ON Semiconductor, MUN5331DW1T1G Datasheet - Page 3

• Manufacturer Part Number: MUN5331DW1T1G
• Description: TRANS BRT DUAL 100MA 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5331DW1T1G

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 8 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS
(T
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
Collector-Emitter Cutoff Current (V
Emitter-Base Cutoff Current
Collector-Base Breakdown Voltage (I
Collector-Emitter Breakdown Voltage (Note 3) (I
A
(V
= 25°C unless otherwise noted, common for Q
EB
= 6.0 V, I
C
= 0)
Characteristic
CB
CE
= 50 V, I
C
= 50 V, I
= 10 mA, I
E
= 0)
B
= 0)
C
MUN5311DW1T1G
MUN5312DW1T1G
MUN5313DW1T1G
MUN5314DW1T1G
MUN5315DW1T1G
MUN5316DW1T1G
MUN5330DW1T1G
MUN5331DW1T1
MUN5332DW1T1G
MUN5333DW1T1
MUN5334DW1T1G
MUN5335DW1T1G
E
1
= 2.0 mA, I
= 0)
and Q
http://onsemi.com
2
, − minus sign for Q
B
= 0)
G
G
3
V
V
Symbol
(BR)CBO
(BR)CEO
I
I
I
CBO
CEO
EBO
1
(PNP) omitted)
Min
50
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.18
0.13
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.2
−
−
mAdc
nAdc
nAdc
Unit
Vdc
Vdc