MUN5331DW1T1G ON Semiconductor, MUN5331DW1T1G Datasheet - Page 30

• Manufacturer Part Number: MUN5331DW1T1G
• Description: TRANS BRT DUAL 100MA 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5331DW1T1G

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 8 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

1.0
0.8
0.6
0.4
0.2
1.2
0.01
0
0.1
0
1
0
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5336DW1T1G NPN TRANSISTOR
V
10
Figure 120. Output Capacitance
1
R
, REVERSE BIAS VOLTAGE (VOLTS)
I
Figure 118. V
C
, COLLECTOR CURRENT (mA)
20
2
3
30
100
10
CE(sat)
1
0
4
−25°C
25°C
Figure 122. Input Voltage versus Output
40
versus I
75°C
2
f = 1 MHz
I
T
5
E
4
A
I
25°C
C
= 0 V
= 25°C
, COLLECTOR CURRENT (mA)
50
I
C
C
/I
6
http://onsemi.com
B
6
= 10
75°C
T
A
8
= −25°C
60
Current
7
30
10
1000
100
12
100
0.1
10
10
1
1
0
1
V
14
O
= 0.2 V
Figure 121. Output Current versus Input
1
16
2
Figure 119. DC Current Gain
I
C
V
18
, COLLECTOR CURRENT (mA)
in
T
, INPUT VOLTAGE (VOLTS)
3
A
75°C
= −25°C
20
25°C
4
Voltage
5
10
25°C
6
T
V
A
7
O
V
75°C
= −25°C
CE
= 5 V
= 10 V
8
9
100
10