BC 857B E6327 Infineon Technologies, BC 857B E6327 Datasheet - Page 8

• Manufacturer Part Number: BC 857B E6327
• Description: TRANSISTOR PNP AF 45V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BC 857B E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 330mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 250 at 10 uA at 5 V
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 330 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BC 857B E6327; BC857BE6327INTR; BC857BE6327NT; BC857BE6327XT; SP000010633

Total power dissipation P
BC857BL3, BC858BL3
Permissible Pulse Load
P
BC856/W-BC860/W
P
P
totmax
tot max
tot
mW
DC
300
250
225
200
175
150
125
100
75
50
25
10
10
10
10
0
5
5
5
0
/P
3
2
1
0
10
totDC
-6
15
10
30
= ƒ(t
-5
45
10
p
60
-4
)
D
=
75
t
T
10
p
-3
90 105 120 °C
tot
t
p
10
= ƒ(T
-2
T
D =
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
S
t
s
p
EHP00377
)
T
S
150
10
0
8
Total power dissipation P
BC856W-BC860W
Permissible Puls Load R
BC857BF, BC858BF
K/W
mW
10
300
250
225
200
175
150
125
100
10
10
10
75
50
25
-1
0
2
1
0
10
0
-6
15
10
30
-5
45
10
-4
60
BC856...-BC860...
10
75
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
-3
thJS
90 105 120 °C
tot
10
= ƒ(T
= ƒ (t
-2
2008-04-29
S
p
s
)
)
T
t
p
S
150
10
0