BFP620 Infineon Technologies AG, BFP620 Datasheet

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BFP620

Manufacturer Part Number
BFP620
Description
Manufacturer
Infineon Technologies AG
Datasheet
NPN Silicon Germanium RF Transistor
BFP620
Maximum Ratings
Collector-emitter voltage
T
T
Total power dissipation
T
1 T
Junction - soldering point
ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
Type
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
A
A
S
Gold metallization for extra high reliability
High gain low noise RF transistor
Provides outstanding performance
Ideal for CDMA and WLAN applications
Outstanding noise figure F = 0.7 dB at 1.8 GHz
Maximum stable gain
for a wide range of wireless applications
Outstanding noise figure F = 1.3 dB at 6 GHz
G
G
S is measured on the collector lead at the soldering point to the pcb
> 0 °C
ms
ma
0 °C
95°C
= 21.5 dB at 1.8 GHz
= 11 dB at 6 GHz
R2s
Marking
1)
1)
1=B
2=E
Pin Configuration
3=C
1
V
Symbol
V
V
V
I
I
P
T
T
T
Symbol
R
C
B
CEO
CES
CBO
EBO
tot
j
A
stg
thJS
4=E
-
4
-65 ... 150
-65 ... 150
-
Value
Value
3
185
150
2.3
2.1
7.5
7.5
1.2
80
300
3
Package
SOT343
1
Apr-21-2004
BFP620
VPS05605
2
V
mA
mW
°C
K/W
Unit
Unit

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BFP620 Summary of contents

Page 1

... Thermal Resistance Parameter 1) Junction - soldering point Pin Configuration 1=B 2=E 3=C 4=E Symbol V CEO V CES V CBO V EBO tot stg Symbol R thJS 1 BFP620 VPS05605 Package - - SOT343 Value Unit V 2.3 2.1 7.5 7.5 1 185 mW 150 °C -65 ... 150 -65 ... 150 Value Unit K/W 300 Apr-21-2004 ...

Page 2

... Emitter-base cutoff current current gain mA 1.5 V, pulse measured For calculation of R please refer to Application Note Thermal Resistance thJA = 25°C, unless otherwise specified A Symbol V (BR)CEO I CES I CBO I EBO BFP620 Values Unit min. typ. max. 2.3 2 µ 100 µA 110 180 270 - Apr-21-2004 ...

Page 3

... IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz = 25°C, unless otherwise specified A Symbol Sopt = Z S Sopt Sopt Sopt 21e = -1dB = 21e 12e 3 BFP620 Values Unit min. typ. max GHz - 0. dBm - 15 - Apr-21-2004 ...

Page 4

... BF = 425 A IKF = 0. IKR = 3.129 - RE = 0.6 V VJE = 0.75 - XTF = 10 deg PTF = 0 - MJC = 0.5 fF CJS = 128 -1. 0 7.291E-11 TITF2 1.0E-5 4 BFP620 1.025 - ISE = ISC = 1.522 mA IRB = 2.364 RC = 0.3 - MJE = 1.5 V VTF = 124.9 fF CJC = 1 - XCJC = 0.52 V VJS = 1.078 298 K TNOM 60 LBC = pH 50 ...

Page 5

... Permissible Pulse Load totmax totDC 0.005 0,01 0,02 0,05 0,1 0,2 0 Permissible Pulse Load K 120 °C 150 Collector-base capacitance 1MHz 0.4 pF 0.3 0.25 0.2 0.15 0.1 0. ° BFP620 = ( t ) thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 ° Apr-21-2004 ...

Page 6

... Third order Intercept Point IP (Output = parameter 900MHz - CE 27 dBm 0. Power gain 1. Parameter in GHz Transition frequency 1GHz V = Parameter GHz 2. 100 Power Gain |² ( 1. BFP620 = ( 1.3 to 2.3 1 0.8 0.5 0 50mA C Gms Gma |S21|² GHz Apr-21-2004 100 6 ...

Page 7

... Power gain 50mA Parameter in GHz 0.2 0 0.9 1.8 2 1.8 2 BFP620 Apr-21-2004 ...

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