BFP520 Infineon Technologies AG, BFP520 Datasheet

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BFP520

Manufacturer Part Number
BFP520
Description
NPN silicon RF transistor
Manufacturer
Infineon Technologies AG
Datasheet

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NPN Silicon RF Transistor
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP520
Maximum Ratings
Parameter
Collector-emitter voltage
T
T
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
1
2
Pb-containing package may be available upon special request
T
A
A
S
For highest gain low noise amplifier
For oscillators up to 15 GHz
Transition frequency f
Gold metallisation for high reliability
SIEGET
Pb-free (RoHS compliant) package
Qualified according AEC Q101
at 1.8 GHz and 2 mA / 2 V
Outstanding G
Noise Figure F = 0.95 dB
S
> 0 °C
is measured on the collector lead at the soldering point to pcb
0 °C
105 °C
45 - Line
ms
Marking
APs
= 23.5 dB
2)
T
= 45 GHz
1=B
1)
2=E
Pin Configuration
3=C
1
Symbol
V
V
V
V
I
I
P
T
T
T
C
B
CEO
CES
CBO
EBO
tot
j
A
stg
4=E
-
4
-65 ... 150
-65 ... 150
-
3
Value
100
150
2.5
2.4
10
10
40
1
4
Package
SOT343
2007-03-30
BFP520
1
2
Unit
V
mA
mW
°C

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BFP520 Summary of contents

Page 1

... Pb-containing package may be available upon special request measured on the collector lead at the soldering point to pcb S 1) Pin Configuration 1=B 2=E 3=C 4=E Symbol V CEO V CES V CBO V EBO tot stg 1 BFP520 Package - - SOT343 Value Unit V 2.5 2 100 mW 150 °C -65 ... 150 -65 ... 150 2007-03-30 ...

Page 2

... C DC current gain mA pulse measured For calculation of R please refer to Application Note Thermal Resistance thJA Symbol R thJS = 25°C, unless otherwise specified A Symbol V (BR)CEO I CES I CBO I EBO BFP520 Value Unit K/W 450 Values Unit min. typ. max. 2 µ 200 µ ...

Page 3

... GHz Sopt, L Lopt mA 1.8 GHz Sopt, L Lopt 1dB Compression point mA 1.8 GHz L Lopt mA 1.8 GHz L Lopt 25°C, unless otherwise specified A Symbol Sopt Sopt L Lopt -1dB , Sopt , Sopt 3 BFP520 Values Unit min. typ. max GHz - 0. dBm - 2007-03-30 ...

Page 4

... For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a InfineonTechnologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes - BF = 235 A IKF = 0 1.5 A IKR = 0. 0.6 V VJE = 0.958 - XTF = 10 deg PTF = 50 - MJC = 0.236 fF CJS = 0 - XTB = -0. 0.5 4 BFP520 ISE = ISC = - A IRB = 7 0.335 - MJE = 5 V VTF = 93 fF CJC = 1 - XCJC = 0.75 V VJS = 1. 298 K TNOM 0.47 ...

Page 5

... Total power dissipation P tot 120 mW 100 Permissible Pulse Load totmax totDC 0.005 0.01 - 0.02 0.05 0.1 0.2 0 Permissible Pulse Load K 120 °C 100 150 Collector-base capacitance 1MHz 0.3 pF 0.2 0.15 0.1 0. BFP520 = ( t ) thJS p 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 2007-03- ...

Page 6

... Transition frequency GHz V = parameter GHz Power gain parameter in GHz Power gain 0. 0 Power gain parameter in GHz 32 0.9 dB 1 BFP520 |S21|² Gma GHz 0.9 1.8 2 0 2007-03- ...

Page 7

... 1.8 GHz 1 GHz GHz GHz GHz f = 2.4 GHz f = 1.8 GHz 0 0.9 GHz Source impedance for min. noise figure vs. frequency +j10 0 -j10 5 GHz 6 BFP520 ( 50Ohm Zs = Zsopt +j50 +j25 +j100 3GHz 1.8GHz 4GHz 0.9GHz 5GHz 6GHz 100 0.45GHz 2mA 5mA -j25 -j100 -j50 ...

Page 8

... Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 0.9 ±0.1 2 ±0.2 0.1 MAX. 1 0.15 +0.1 0.6 -0.05 0 0.6 1.15 0.9 Manufacturer 2005, June Date code (YM) BGA420 Pin 1 Type code 0.2 4 2.15 1.1 8 BFP520 A +0.1 -0.05 2007-03-30 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. www.infineon.com 9 BFP520 ). 2007-03-30 ...

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