BG3130R Infineon Technologies AG, BG3130R Datasheet

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BG3130R

Manufacturer Part Number
BG3130R
Description
Manufacturer
Infineon Technologies AG
Datasheet

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Part Number:
BG3130R
Manufacturer:
Infineon
Quantity:
180 000
Part Number:
BG3130R E6327
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INFINEON
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DUAL N-Channel MOSFET Tetrode
180° rotated tape loading orientation available
Channel - soldering point
1 For calculation of R
BG3130
ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Type
BG3130
BG3130R
Two gain controlled input stage for UHF
Two AGC amplifiers in one single package
Integrated gate protection diodes
High AGC-range, low noise figure, high gain
Improved cross modulation at gain reduction
and VHF -tuners e.g. (NTSC, PAL)
thJA
BG3130R
Package
SOT363
SOT363
please refer to Application Note Thermal Resistance
1)
1=G1
1=G1
2=G2
2=S
AGC
HF
Input
1
Pin Configuration
3=D
3=D
R
Symbol
V
I
P
T
T
Symbol
R
D
G1
I
V
stg
ch
DS
tot
V
thchs
G1/2SM
GG
G1/G2S
G2
G1
4=D
4=D
6
GND
5=S
5=G2
-55 ... 150
5
Value
Value
Drain
200
150
25
280
8
1
6
4
6=G1
6=G1
HF Output
+ DC
Feb-27-2004
EHA07461
BG3130...
1
VPS05604
Marking
KAs
KHs
2
K/W
Unit
V
mA
V
mW
°C
Unit
3

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BG3130R Summary of contents

Page 1

... Improved cross modulation at gain reduction BG3130 BG3130R ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution! Type Package BG3130 SOT363 BG3130R SOT363 180° rotated tape loading orientation available Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current ...

Page 2

Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage µ G1S G2S Gate1-source breakdown voltage + mA G1S G2S Gate2-source breakdown voltage + ...

Page 3

Electrical Characteristics Parameter AC Characteristics Forward transconductance Gate1 input capacitance MHz Output capacitance MHz Power gain f = 800 MHz MHz Noise figure f = 800 ...

Page 4

Total power dissipation P amp amp. B 300 mW 200 150 100 Output characteristics I D amp amp ...

Page 5

Gate 1 forward transconductance 5V G2S amp amp 2. Drain current ...

Page 6

Crossmodulation V = (AGC) unw 120 dBµV 100 Cossmodulation test circuit R GEN 50 Ohm AGC V AGC R1 2.2 µH 10 ...

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