BG3130 Infineon Technologies AG, BG3130 Datasheet

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BG3130

Manufacturer Part Number
BG3130
Description
Manufacturer
Infineon Technologies AG
Datasheet
DUAL N-Channel MOSFET Tetrode
180° rotated tape loading orientation available
Channel - soldering point
1 For calculation of R
BG3130
ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Type
BG3130
BG3130R
Two gain controlled input stage for UHF
Two AGC amplifiers in one single package
Integrated gate protection diodes
High AGC-range, low noise figure, high gain
Improved cross modulation at gain reduction
and VHF -tuners e.g. (NTSC, PAL)
thJA
BG3130R
Package
SOT363
SOT363
please refer to Application Note Thermal Resistance
1)
1=G1
1=G1
2=G2
2=S
AGC
HF
Input
1
Pin Configuration
3=D
3=D
R
Symbol
V
I
P
T
T
Symbol
R
D
G1
I
V
stg
ch
DS
tot
V
thchs
G1/2SM
GG
G1/G2S
G2
G1
4=D
4=D
6
GND
5=S
5=G2
-55 ... 150
5
Value
Value
Drain
200
150
25
280
8
1
6
4
6=G1
6=G1
HF Output
+ DC
Feb-27-2004
EHA07461
BG3130...
1
VPS05604
Marking
KAs
KHs
2
K/W
Unit
V
mA
V
mW
°C
Unit
3

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BG3130 Summary of contents

Page 1

... G1 HF Input Pin Configuration 1=G1 2=G2 3=D 4=D 1=G1 2=S 3=D 4=D Symbol G1/2SM V G1/G2S P tot T stg T ch Symbol R thchs 1 BG3130... VPS05604 Drain HF Output + DC GND EHA07461 Marking 5=S 6=G1 KAs 5=G2 6=G1 KHs Value Unit 200 mW °C -55 ... 150 150 Value Unit ...

Page 2

... Gate2-source leakage current G2S G1S Drain current G1S G2S Drain-source current G2S G1 Gate1-source pinch-off voltage G2S D Gate2-source pinch-off voltage µ Symbol V (BR) (BR)G1SS = (BR)G2SS = G1SS +I G2SS = DSS = 4 DSX = 120 k V G1S( µA V G2S(p) 2 BG3130... Values Unit min. typ. max µ µ 0 0.6 - Feb-27-2004 ...

Page 3

... Power gain f = 800 MHz MHz Noise figure f = 800 MHz MHz Gain control range ... 800 MHz G2S Cross-modulation k=1 AGC = 0 dB AGC = 10 dB AGC = 40 dB Symbol = 4V mA) (verified by random sampling) G2S g1ss C dss =50MHz, f =60MHz X unw mod 3 BG3130... Values min. typ. max ...

Page 4

... A = amp Drain current I tot S V G2S amp amp 120 °C 100 150 Gate 1 current 5V amp amp. B 225 1.3V µA 175 1.2V 150 1.1V 125 1V 100 BG3130... = ( G1S = Parameter G2S 0 0.4 0.8 1.2 1.6 2 2.4 Feb-27-2004 80 µA 100 3. ...

Page 5

... G2S G1 (connected =gate1 supply voltage 0.5 1 1.5 2 2.5 Drain current I = Parameter amp amp µ 3. amp.A=amp.B Drain current I = 120k V G2S amp amp 3 BG3130... = ( G1S = Parameter G2S 1.2 1.4 1 0.2 0.4 0 Parameter Feb-27-2004 4V 3V 2. G1S 70 80 100 120 ...

Page 6

... Crossmodulation V = (AGC) unw 120 dBµV 100 Cossmodulation test circuit R GEN 50 Ohm AGC V AGC R1 2.2 µH 10 kOhm 4n7 4n7 RG1 50 Ohm BG3130... V DS 4n7 4n7 RL 50 Ohm Feb-27-2004 ...

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