BFP182W Infineon Technologies AG, BFP182W Datasheet

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BFP182W

Manufacturer Part Number
BFP182W
Description
NPN silicon RF transistor
Manufacturer
Infineon Technologies AG
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BFP182W
Manufacturer:
INFINEON
Quantity:
24 000
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BFP182W
Manufacturer:
CPCLARE
Quantity:
245
Price:
NPN Silicon RF Transistor*
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP182W
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
2
3
Pb-containing package may be available upon special request
T S is measured on the collector lead at the soldering point to the pcb
For calculation of R
S
For low noise, high-gain broadband amplifiers at
f
Pb-free (RoHS compliant) package
Qualified according AEC Q101
collector currents from 1 mA to 20 mA
T
= 8 GHz, F = 0.9 dB at 900 MHz
91 °C
thJA
Marking
RGs
please refer to Application Note Thermal Resistance
2)
3)
1=E
1)
2=C
Pin Configuration
3=E
1
Symbol
V
V
V
V
I
I
P
T
T
T
Symbol
R
C
B
CEO
CES
CBO
EBO
tot
j
A
stg
thJS
4 = B -
4
-65 ... 150
-65 ... 150
-
3
Value
Value
250
150
12
20
20
35
235
2
4
Package
SOT343
2007-04-20
BFP182W
1
2
Unit
V
mA
mW
°C
Unit
K/W

Related parts for BFP182W

BFP182W Summary of contents

Page 1

... measured on the collector lead at the soldering point to the pcb 3 For calculation of R please refer to Application Note Thermal Resistance thJA 1) Pin Configuration 1=E 2=C 3 Symbol V CEO V CES V CBO V EBO tot stg Symbol R thJS 1 BFP182W Package - SOT343 Value Unit 250 mW 150 °C -65 ... 150 -65 ... 150 Value Unit K/W 235 2007-04-20 ...

Page 2

... Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current Emitter-base cutoff current current gain mA pulse measured 25°C, unless otherwise specified A Symbol V (BR)CEO I CES I CBO I EBO BFP182W Values Unit min. typ. max 100 µ 100 µA 70 100 140 - 2007-04-20 ...

Page 3

... Power gain, maximum available mA 1.8 GHz Transducer gain mA 900 MHz mA 1.8 GHz 21e / S 12e | (k-(k²-1) 1 25°C, unless otherwise specified A Symbol Sopt , Sopt Sopt L Lopt Sopt L Lopt 21e = BFP182W Values Unit min. typ. max GHz - 0. 2007-04-20 ...

Page 4

... BF = 84.113 A IKF = 0.14414 - BR = 10.004 A IKR = 0.039478 RB = 3.4217 - RE = 2.1858 V VJE = 1.0378 - XTF = 0.43147 deg PTF = 0 - MJC = 0.31068 fF CJS = 0 - XTB = 0.64175 4 BFP182W 0.56639 - NF = 8.4254 fA ISE = 0.54818 - NR = 5.9438 fA ISC = 0.071955 mA IRB = 1.8159 RC = 0.40796 - MJE = 0.34608 V VTF = 490.25 fF CJC = 0.19281 - XCJC = 0.75 V VJS = 1. 300 K TNOM 0 ...

Page 5

... Total power dissipation P tot 300 mW 200 150 100 Permissible Pulse Load totmax totDC 0.005 0.01 0.02 0. 0.1 0.2 0 Permissible Pulse Load K 100 120 °C 150 BFP182W = ( t ) thJS p 0.5 0.2 0.1 0.05 0.02 0.01 0.005 2007-04- ...

Page 6

... Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 0.9 ±0.1 2 ±0.2 0.1 MAX. 1 0.15 +0.1 0.6 -0.05 0 0.6 1.15 0.9 Manufacturer 2005, June Date code (YM) BGA420 Pin 1 Type code 0.2 4 2.15 1.1 6 BFP182W A +0.1 -0.05 2007-04-20 ...

Page 7

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. www.infineon.com 7 BFP182W ). 2007-04-20 ...

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