BFP193W Infineon Technologies AG, BFP193W Datasheet

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BFP193W

Manufacturer Part Number
BFP193W
Description
NPN silicon RF transistor
Manufacturer
Infineon Technologies AG
Datasheet
NPN Silicon RF Transistor*
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP193W
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
2
3
Pb-containing package may be available upon special request
T S is measured on the collector lead at the soldering point to the pcb
For calculation of R
S
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
f
Pb-free (RoHS compliant) package
Qualified according AEC Q101
T
= 8 GHz, F = 1 dB at 900 MHz
66°C
thJA
Marking
RCs
please refer to Application Note Thermal Resistance
2)
3)
1 = E 2 = C 3 = E 4 = B -
1)
Pin Configuration
1
Symbol
V
V
V
V
I
I
P
T
T
T
Symbol
R
C
B
CEO
CES
CBO
EBO
tot
j
A
stg
thJS
4
-55 ... 150
-55 ... 150
-
3
Value
Value
580
150
12
20
20
80
10
145
2
Package
SOT343
2007-04-20
BFP193W
1
2
Unit
V
mA
mW
°C
Unit
K/W

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BFP193W Summary of contents

Page 1

... measured on the collector lead at the soldering point to the pcb 3 For calculation of R please refer to Application Note Thermal Resistance thJA 1) Pin Configuration Symbol V CEO V CES V CBO V EBO tot stg Symbol R thJS 1 BFP193W Package - SOT343 Value Unit 580 mW 150 °C -55 ... 150 -55 ... 150 Value Unit K/W 145 2007-04-20 ...

Page 2

... Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current Emitter-base cutoff current current gain mA pulse measured 25°C, unless otherwise specified A Symbol V (BR)CEO I CES I CBO I EBO BFP193W Values Unit min. typ. max 100 µ 100 µA 70 100 140 - 2007-04-20 ...

Page 3

... GHz Power gain, maximum available mA 900 MHz L Lopt mA 1.8 GHz L Lopt Transducer gain mA 900 MHz mA 1.8 GHz 1 (k-(k²- 25°C, unless otherwise specified A Symbol Sopt , Sopt Sopt , Sopt 21e = BFP193W Values Unit min. typ. max GHz - 0. 2007-04-20 ...

Page 4

... BF = 125 A IKF = 0.26949 - BR = 14.267 A IKR = 0.037925 RB = 1.8368 - RE = 0.76534 V VJE = 0.70276 XTF = 0.69477 - deg PTF = 0 MJC = 0.30002 - fF CJS = 0.72063 4 BFP193W 0.95341 - NF = 10.627 fA ISE = 1.4289 - NR = 0.037409 fA ISC = 0.91763 mA IRB = 0.11938 RC = 0.48654 - MJE = 0.8 V VTF = 935.03 fF CJC = 0.053563 - XCJC = 0.75 V VJS = 1. 300 K TNOM ...

Page 5

... Total power dissipation P tot 600 mW 500 450 400 350 300 250 200 150 100 Permissible Pulse Load totmax totDC 0.005 1 10 0.01 0.02 0.05 0.1 0.2 0 Permissible Pulse Load K 120 °C 100 150 BFP193W = ( t ) thJS p 0.5 0.2 0.1 0.05 0.02 0.01 0.005 2007-04- ...

Page 6

... Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 0.9 ±0.1 2 ±0.2 0.1 MAX. 1 0.15 +0.1 0.6 -0.05 0 0.6 1.15 0.9 Manufacturer 2005, June Date code (YM) BGA420 Pin 1 Type code 0.2 4 2.15 1.1 6 BFP193W A +0.1 -0.05 2007-04-20 ...

Page 7

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. www.infineon.com 7 BFP193W ). 2007-04-20 ...

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