2N3906RLRAG ON Semiconductor, 2N3906RLRAG Datasheet - Page 2
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2N3906RLRAG
Manufacturer Part Number
2N3906RLRAG
Description
TRANS PNP GP SS 200MA 40V TO92
Manufacturer
ON Semiconductor
Type
General Purposer
Specifications of 2N3906RLRAG
Transistor Type
PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
625mW
Frequency - Transition
250MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Current, Collector
200 mA
Current, Gain
30
Frequency
250 MHz
Package Type
TO-92
Polarity
PNP
Power Dissipation
1.5 W
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Collector To Base
40 V
Voltage, Collector To Emitter
40 V
Voltage, Collector To Emitter, Saturation
0.4 V
Voltage, Emitter To Base
5 V
Dc
0608
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
2N3906RLRAGOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N3906RLRAG
Manufacturer:
ON Semiconductor
Quantity:
1 150
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Current −Gain − Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small−Signal Current Gain
Output Admittance
Noise Figure
Delay Time
Rise Time
Storage Time
Fall Time
(V
I
(V
(V
C
CC
CC
CC
= 10 mAdc, I
= 3.0 Vdc, V
= 3.0 Vdc, I
= 3.0 Vdc, I
(I
C
= 100 mAdc, V
Characteristic
B1
C
C
(T
BE
= 1.0 mAdc)
= 10 mAdc, I
= 10 mAdc, I
(I
(I
(I
(I
(I
A
C
= 0.5 Vdc,
C
C
C
C
= 25°C unless otherwise noted)
= 10 mAdc, V
= 1.0 mAdc, V
= 1.0 mAdc, V
= 1.0 mAdc, V
= 1.0 mAdc, V
CE
= 5.0 Vdc, R
(V
(V
CB
EB
(I
(I
(I
(V
(V
B1
B1
(I
(I
C
(I
(I
(I
= 5.0 Vdc, I
= 0.5 Vdc, I
C
C
(I
C
C
C
C
C
http://onsemi.com
CE
CE
= 100 mAdc, V
C
= 0.1 mAdc, V
= 1.0 mAdc, V
= I
= I
= 10 mAdc, V
= 50 mAdc, V
= 10 mAdc, I
= 10 mAdc, I
= 50 mAdc, I
CE
= 50 mAdc, I
B2
B2
= 30 Vdc, V
= 30 Vdc, V
CE
CE
CE
CE
S
= 20 Vdc, f = 100 MHz)
(I
= 1.0 mAdc)
= 1.0 mAdc)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 1.0 kW, f = 1.0 kHz)
(I
(I
C
C
E
= 1.0 mAdc, I
C
E
2
= 10 mAdc, I
= 10 mAdc, I
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
B
B
B
CE
CE
CE
CE
CE
EB
EB
B
= 1.0 mAdc)
= 1.0 mAdc)
= 5.0 mAdc)
= 5.0 mAdc
= 3.0 Vdc)
= 3.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
B
E
C
= 0)
= 0)
= 0)
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
C
I
C
h
CEX
h
I
h
NF
h
h
BL
f
t
t
obo
t
t
FE
ibo
oe
T
ie
re
fe
d
s
r
f
0.65
Min
100
250
100
5.0
2.0
0.1
3.0
40
40
60
80
60
30
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.25
0.85
0.95
300
400
225
0.4
4.5
4.0
50
50
10
12
10
60
35
35
75
−
−
−
−
−
−
−
−
X 10
mmhos
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
kW
dB
pF
pF
ns
ns
ns
ns
−
−
− 4