2N3906RLRAG ON Semiconductor, 2N3906RLRAG Datasheet - Page 4

• Manufacturer Part Number: 2N3906RLRAG
• Description: TRANS PNP GP SS 200MA 40V TO92
• Manufacturer: ON Semiconductor
• Type: General Purposer

Specifications of 2N3906RLRAG

• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 250MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Current, Collector: 200 mA
• Current, Gain: 30
• Frequency: 250 MHz
• Package Type: TO-92
• Polarity: PNP
• Power Dissipation: 1.5 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 83.3 °C/W
• Voltage, Breakdown, Collector To Emitter: 40 V
• Voltage, Collector To Base: 40 V
• Voltage, Collector To Emitter: 40 V
• Voltage, Collector To Emitter, Saturation: 0.4 V
• Voltage, Emitter To Base: 5 V
• Dc: 0608
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: 2N3906RLRAGOSTR

7.0
5.0
3.0
2.0
1.0
10
500
300
200
100
70
50
30
20
10
7
5
0.1
1.0
0.2 0.3 0.5 0.7
2.0 3.0
Figure 5. Turn −On Time
Figure 3. Capacitance
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0
REVERSE BIAS (VOLTS)
1.0
C
10
C
obo
ibo
2.0 3.0
t
d
@ V
20
TYPICAL TRANSIENT CHARACTERISTICS
OB
5.0 7.0 10
= 0 V
30
t
r
@ V
50
CC
= 3.0 V
70
I
C
/I
100
B
20 30 40
http://onsemi.com
= 10
2.0 V
15 V
40 V
200
4
T
T
J
J
5000
3000
2000
1000
= 25°C
= 125°C
500
300
200
100
700
500
300
200
100
70
50
30
20
10
70
50
7
5
1.0
1.0
V
I
C
CC
/I
B
2.0 3.0
Q
2.0 3.0
= 40 V
= 10
T
I
C
I
C
Figure 4. Charge Data
, COLLECTOR CURRENT (mA)
5.0 7.0
, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 6. Fall Time
10
I
C
/I
B
= 10
20
20
I
C
/I
B
30
30
= 20
50
50 70 100
Q
A
V
I
70
B1
CC
= I
100
= 40 V
B2
200
200