MMBT5401LT1G ON Semiconductor, MMBT5401LT1G Datasheet - Page 12

• Manufacturer Part Number: MMBT5401LT1G
• Description: TRANS SS PNP 150V HV SOT23
• Manufacturer: ON Semiconductor
• Type: High Voltager

Specifications of MMBT5401LT1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 150V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 5mA, 50mA
• Current - Collector Cutoff (max): 50nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 10mA, 5V
• Power - Max: 225mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 150 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: - 500 mA
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 50 at 1 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: -500 mA
• Current, Gain: 50
• Frequency: 300 MHz
• Package Type: SOT-23
• Polarity: PNP
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: -150 V
• Voltage, Collector To Base: -160 V
• Voltage, Collector To Emitter: -150 V
• Voltage, Collector To Emitter, Saturation: -0.5 V
• Voltage, Emitter To Base: -5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBT5401LT1GOS; MMBT5401LT1GOS; MMBT5401LT1GOSTR

Product Bulletin #16134
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Issue Date: 11 Jul 2008
Rev.07-02-06
Page 12 of 14