MMBT6427LT1G ON Semiconductor, MMBT6427LT1G Datasheet

TRANS SS DARL NPN 40V SOT23

MMBT6427LT1G

Manufacturer Part Number
MMBT6427LT1G
Description
TRANS SS DARL NPN 40V SOT23
Manufacturer
ON Semiconductor
Type
Small Signalr
Datasheets

Specifications of MMBT6427LT1G

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1.5V @ 500µA, 500mA
Current - Collector Cutoff (max)
1µA
Dc Current Gain (hfe) (min) @ Ic, Vce
20000 @ 100mA, 5V
Power - Max
225mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
12 V
Collector- Base Voltage Vcbo
40 V
Maximum Dc Collector Current
0.5 A
Maximum Collector Cut-off Current
0.05 uA
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
0.5 A
Dc Collector/base Gain Hfe Min
10000
Minimum Operating Temperature
- 55 C
Capacitance, Input
15 pF
Current, Gain
140000
Current, Output
500 mADC
Package Type
SOT-23
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Ambient
556
Voltage, Collector To Emitter, Saturation
1.5 VDC
Voltage, Input
12 VDC
Voltage, Output
40 VDC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT6427LT1GOS
MMBT6427LT1GOS
MMBT6427LT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBT6427LT1G
Manufacturer:
ON
Quantity:
6 000
Part Number:
MMBT6427LT1G
Manufacturer:
ON Semiconductor
Quantity:
20 000
Part Number:
MMBT6427LT1G
Manufacturer:
ON
Quantity:
12 500
Part Number:
MMBT6427LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
MMBT6427LT1G
Darlington Transistor
NPN Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 3
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Device Dissipation FR−5 Board,
(Note 1) T
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina Substrate,
(Note 2) T
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
A
A
= 25°C
= 25°C
Characteristic
Rating
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
EBO
, T
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
Max
500
225
556
300
417
1.8
2.4
40
40
12
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
†For information on tape and reel specifications,
MMBT6427LT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
Device
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
ORDERING INFORMATION
1V = Device Code
M
G
MARKING DIAGRAM
BASE
http://onsemi.com
1
SOT−23 (TO−236)
COLLECTOR 3
1
= Date Code*
= Pb−Free Package
1
(Pb−Free)
Package
CASE 318
SOT−23
EMITTER 2
STYLE 6
1V M G
2
Publication Order Number:
G
3
3,000 / Tape & Reel
MMBT6427LT1/D
Shipping

Related parts for MMBT6427LT1G

MMBT6427LT1G Summary of contents

Page 1

... R 417 °C/W qJA −55 to +150 °C J stg MMBT6427LT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com COLLECTOR 3 BASE 1 EMITTER SOT−23 (TO−236) ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage ( mAdc Collector −Base Breakdown Voltage (I = 100 mAdc Emitter−Base Breakdown Voltage ( mAdc ...

Page 3

BANDWIDTH = 1.0 Hz ≈ 200 100 50 100 1 5 100 200 500 FREQUENCY ...

Page 4

SMALL−SIGNAL CHARACTERISTICS 20 10 7.0 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2 REVERSE VOLTAGE (VOLTS) R Figure 6. Capacitance 200 125°C J 100 25° ...

Page 5

D = 0.5 0.5 0.2 0.3 0.2 SINGLE PULSE 0.05 0.1 0.1 0.07 SINGLE PULSE 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 Design Note: Use of Transient Thermal Resistance Data Z qJC(t) Z qJA(t) 5.0 10 ...

Page 6

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

Related keywords