MMBT6427LT1G ON Semiconductor, MMBT6427LT1G Datasheet
MMBT6427LT1G
Manufacturer Part Number
MMBT6427LT1G
Description
TRANS SS DARL NPN 40V SOT23
Manufacturer
ON Semiconductor
Type
Small Signalr
Specifications of MMBT6427LT1G
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1.5V @ 500µA, 500mA
Current - Collector Cutoff (max)
1µA
Dc Current Gain (hfe) (min) @ Ic, Vce
20000 @ 100mA, 5V
Power - Max
225mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
12 V
Collector- Base Voltage Vcbo
40 V
Maximum Dc Collector Current
0.5 A
Maximum Collector Cut-off Current
0.05 uA
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
0.5 A
Dc Collector/base Gain Hfe Min
10000
Minimum Operating Temperature
- 55 C
Capacitance, Input
15 pF
Current, Gain
140000
Current, Output
500 mADC
Package Type
SOT-23
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Ambient
556
Voltage, Collector To Emitter, Saturation
1.5 VDC
Voltage, Input
12 VDC
Voltage, Output
40 VDC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT6427LT1GOS
MMBT6427LT1GOS
MMBT6427LT1GOSTR
MMBT6427LT1GOS
MMBT6427LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT6427LT1G
Manufacturer:
ON
Quantity:
6 000
Company:
Part Number:
MMBT6427LT1G
Manufacturer:
ON Semiconductor
Quantity:
20 000
Company:
Part Number:
MMBT6427LT1G
Manufacturer:
ON
Quantity:
12 500
Part Number:
MMBT6427LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
MMBT6427LT1
Darlington Transistor
NPN Silicon
Features
•
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation FR−5 Board,
(Note 1) T
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina Substrate,
(Note 2) T
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Pb−Free Package is Available
A
A
= 25°C
= 25°C
Characteristic
Rating
Preferred Device
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
, T
EBO
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
Max
500
225
556
300
417
1.8
2.4
40
40
12
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
†For information on tape and reel specifications,
MMBT6427LT1
MMBT6427LT1G
Preferred devices are recommended choices for future use
and best overall value.
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
Device
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
ORDERING INFORMATION
MARKING DIAGRAM
1V = Device Code
M
G
BASE
1
SOT−23 (TO−236)
COLLECTOR 3
1
= Date Code*
= Pb−Free Package
1
(Pb−Free)
Package
CASE 318
SOT−23
SOT−23
EMITTER 2
STYLE 6
1V M G
2
G
3
3,000 / Tape & Reel
3,000 / Tape & Reel
Shipping
†
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MMBT6427LT1G Summary of contents
Page 1
... R qJA ° −55 to +150 J stg MMBT6427LT1 MMBT6427LT1G †For information on tape and reel specifications, Preferred devices are recommended choices for future use and best overall value. 1 COLLECTOR 3 BASE 1 EMITTER SOT−23 (TO−236) CASE 318 STYLE 6 MARKING DIAGRAM ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage ( mAdc Collector −Base Breakdown Voltage = 100 mAdc Emitter −Base Breakdown Voltage = 10 mAdc ...
Page 3
... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MMBT6427LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...