MMBT6427LT1G ON Semiconductor, MMBT6427LT1G Datasheet - Page 2

• Manufacturer Part Number: MMBT6427LT1G
• Description: TRANS SS DARL NPN 40V SOT23
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of MMBT6427LT1G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 500µA, 500mA
• Current - Collector Cutoff (max): 1µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 225mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 12 V
• Collector- Base Voltage Vcbo: 40 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.05 uA
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 0.5 A
• Dc Collector/base Gain Hfe Min: 10000
• Minimum Operating Temperature: - 55 C
• Capacitance, Input: 15 pF
• Current, Gain: 140000
• Current, Output: 500 mADC
• Package Type: SOT-23
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Ambient: 556
• Voltage, Collector To Emitter, Saturation: 1.5 VDC
• Voltage, Input: 12 VDC
• Voltage, Output: 40 VDC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT6427LT1GOS; MMBT6427LT1GOS; MMBT6427LT1GOSTR

3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL− SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Base −Emitter On Voltage
Output Capacitance
Input Capacitance
Current Gain − High Frequency
Noise Figure
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(V
(V
(I
(I
C
C
C
C
C
C
C
C
C
C
C
C
CE
CB
EB
CB
EB
= 10 mAdc, V
= 100 mAdc, I
= 10 mAdc, I
= 10 mAdc, V
= 100 mAdc, V
= 500 mAdc, V
= 50 mAdc, I
= 500 mAdc, I
= 500 mAdc, I
= 50 mAdc, V
= 10 mAdc, V
= 1.0 mAdc, V
= 25 Vdc, I
= 30 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 0.5 Vdc, I
C
C
B
B
E
E
E
C
BE
CE
CE
CE
= 0)
B
B
CE
= 0.5 mAdc)
= 0)
= 0)
= 0)
CE
CE
= 0, f = 1.0 MHz)
= 0)
= 0, f = 1.0 MHz)
= 0.5 mAdc)
= 0.5 mAdc)
= 0)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc, f = 100 MHz)
= 5.0 Vdc, R
= 5.0 Vdc)
= 5.0 Vdc)
Characteristic
(T
A
S
= 25°C unless otherwise noted)
= 100 kW, f = 1.0 kHz)
R
S
Figure 1. Transistor Noise Model
e
n
MMBT6427LT1
i
n
2
TRANSISTOR
IDEAL
V
V
V
V
Symbol
V
V
CE(sat)
(BR)CEO
(BR)CBO
(BR)EBO
I
I
I
BE(sat)
C
BE(on)
C
|h
h
CES
CBO
EBO
NF
obo
FE
ibo
fe
|
(3)
10,000
20,000
14,000
Min
1.3
40
40
12
−
−
−
−
−
−
−
−
−
−
100,000
200,000
140,000
Max
1.75
1.0
1.2
1.5
2.0
7.0
50
50
15
10
−
−
−
−
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
dB
pF
pF
−