MMBT6427LT1G ON Semiconductor, MMBT6427LT1G Datasheet - Page 3
![TRANS SS DARL NPN 40V SOT23](/photos/1/38/13877/sot-23-3_to-236-3_micro3_ssd3_sst3_sml.jpg)
MMBT6427LT1G
Manufacturer Part Number
MMBT6427LT1G
Description
TRANS SS DARL NPN 40V SOT23
Manufacturer
ON Semiconductor
Type
Small Signalr
Specifications of MMBT6427LT1G
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1.5V @ 500µA, 500mA
Current - Collector Cutoff (max)
1µA
Dc Current Gain (hfe) (min) @ Ic, Vce
20000 @ 100mA, 5V
Power - Max
225mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
12 V
Collector- Base Voltage Vcbo
40 V
Maximum Dc Collector Current
0.5 A
Maximum Collector Cut-off Current
0.05 uA
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
0.5 A
Dc Collector/base Gain Hfe Min
10000
Minimum Operating Temperature
- 55 C
Capacitance, Input
15 pF
Current, Gain
140000
Current, Output
500 mADC
Package Type
SOT-23
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Ambient
556
Voltage, Collector To Emitter, Saturation
1.5 VDC
Voltage, Input
12 VDC
Voltage, Output
40 VDC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT6427LT1GOS
MMBT6427LT1GOS
MMBT6427LT1GOSTR
MMBT6427LT1GOS
MMBT6427LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT6427LT1G
Manufacturer:
ON
Quantity:
6 000
Company:
Part Number:
MMBT6427LT1G
Manufacturer:
ON Semiconductor
Quantity:
20 000
Company:
Part Number:
MMBT6427LT1G
Manufacturer:
ON
Quantity:
12 500
Part Number:
MMBT6427LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
A
A1
E
1
3
D
e
2
b
H
E
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SEE VIEW C
0.037
0.95
0.035
0.9
0.031
VIEW C
PACKAGE DIMENSIONS
0.8
SOLDERING FOOTPRINT*
L1
L
SOT−23 (TO−236)
MMBT6427LT1
CASE 318−08
ISSUE AN
q
0.25
c
SCALE 10:1
0.037
0.95
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
Y14.5M, 1982.
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
STANDARD 318−08.
STYLE 6:
0.079
DIM
PIN 1. BASE
A1
H
2.0
L1
A
b
D
E
c
e
L
E
inches
mm
2. EMITTER
3. COLLECTOR
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
MIN
INCHES
0.040
0.002
0.018
0.005
0.051
0.075
0.008
0.021
0.094
NOM
0.114
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
MAX