PZT3904T1G ON Semiconductor, PZT3904T1G Datasheet

TRANS GP NPN 200MA 40V SOT223

PZT3904T1G

Manufacturer Part Number
PZT3904T1G
Description
TRANS GP NPN 200MA 40V SOT223
Manufacturer
ON Semiconductor
Datasheet

Specifications of PZT3904T1G

Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
1.5W
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage(max)
60V
Emitter-base Voltage (max)
6V
Collector Current (dc) (max)
200mA
Power Dissipation
1.5W
Frequency (max)
300MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Configuration
Single
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
40 at 0.1 mA at 1 V
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Other names
PZT3904T1GOSTR

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Price
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PZT3904T1G
Manufacturer:
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Quantity:
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Part Number:
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Manufacturer:
ON
Quantity:
30 000
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PZT3904T1G
General Purpose Transistor
NPN Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 with 1 oz and 713 mm
© Semiconductor Components Industries, LLC, 2011
April, 2011 − Rev. 4
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation (Note 1)
Thermal Resistance Junction−to−Ambient
Thermal Resistance Junction−to−Lead #4
Junction and Storage Temperature Range
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
T
(Note 1)
A
= 25°C
Characteristic
Rating
2
of copper area.
Symbol
Symbol
T
V
V
V
R
R
J
P
CEO
CBO
EBO
, T
I
qJA
qJA
C
D
stg
−55 to
Value
+150
Max
83.3
200
6.0
1.5
40
60
12
35
1
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
W
†For information on tape and reel specifications,
PZT3904T1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
CASE 318E
(Note: Microdot may be in either location)
SOT−223
STYLE 1
BASE
ORDERING INFORMATION
1AM
A
Y
W
G
1
http://onsemi.com
(Pb−Free)
SOT−223
Package
COLLECTOR
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
EMITTER
2, 4
Publication Order Number:
3
1
1000 / Tape & Reel
MARKING
DIAGRAM
Shipping
1AM G
AYW
PZT3904T1/D
G

Related parts for PZT3904T1G

PZT3904T1G Summary of contents

Page 1

... R °C/W qJA CASE 318E −55 to °C J stg +150 Device PZT3904T1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com COLLECTOR BASE 3 EMITTER MARKING DIAGRAM AYW SOT− ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS (Note 2) Collector −Emitter Breakdown Voltage (Note 1.0 mAdc Collector −Base Breakdown Voltage ( mAdc Emitter −Base Breakdown Voltage (I ...

Page 3

DUTY CYCLE = 2% 300 ns +10 0.5 V < Figure 1. Delay and Rise Time Equivalent Test Circuit +3 V < 500 < DUTY CYCLE = 2% ...

Page 4

TYPICAL TRANSIENT CHARACTERISTICS 10 7.0 5.0 C ibo 3.0 C obo 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE (VOLTS) Figure 3. Capacitance 500 300 200 100 ...

Page 5

TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS ( SOURCE RESISTANCE = 200 1 SOURCE RESISTANCE = 200 0 SOURCE RESISTANCE = 1 ...

Page 6

TYPICAL STATIC CHARACTERISTICS 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 1 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 1 25° BE(sat) 1.0 ...

Page 7

TYPICAL CHARACTERISTICS 1 1.0 s 0.1 0. COLLECTOR−EMITTER VOLTAGE (V) CE Figure 19. Safe Operating Area http://onsemi.com 100 ...

Page 8

... A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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